Influence of Defects Introduced by Irradiation with 4-9 MeV Helium Ions on Impedance of Silicon Diodes

• Authors: N. Poklonski , N. Gorbachuk , Vo Nha , S. Shpakovski , V. Filipenya , V. Skuratov , T. Kołtunowicz , N. Kukharchyk , H. Becker , A. Wieck
• Languages of publication: EN

Abstracts

EN

Silicon diodes irradiated with helium ions with energies of 4.1, 6.8 and 8.9 MeV are studied. It is shown that the mechanism determining the behaviour of frequency dependence of complex electric module and correspondingly the behavior of impedance of diodes irradiated with helium ions in the frequency region 3-200 kHz is a recharging of vacancy complexes localized in the space charge region.

Keywords

EN

72.20.Jv   61.80.Fe  

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2015
• Volume: 128
• Issue: 5
• Pages: 891-893

Dates

published

2015-11

References

• [1] V. Kozlovski, V. Abrosimova, Radiation Defect Engineering, World Sci., Singapore 2005
• [2] P. Hazdra, V. Komarnitskyy, Microelectron. J. 37, 197 (2006), doi: 10.1016/j.mejo.2005.09.010
• [3] P. Hazdra, J. Vobecký, H. Dorschner, K. Brand, Microelectron. J. 35, 249 (2004), doi: 10.1016/S0026-2692(03)00194-0
• [4] V. Eremin, E. Verbitskaya, Z. Li, Nucl. Instrum. Methods Phys. Res. A 476, 537 (2002), doi: 10.1016/S0168-9002(01)01640-0
• [5] R. Siemieniec, F.-J. Niedernostheide, H.-J. Schulze, W. Südkamp, U. Kellner-Werdehausen, J. Lutz, J. Electrochem. Soc. 153, G108 (2006), doi: 10.1149/1.2137649
• [6] V.P. Markevich, O. Andersen, I.F. Medvedeva, J.H. Evans-Freeman, I.D. Hawkins, L.I. Murin, L. Dobaczewski, A.R. Peaker, Physica B 308-310, 513 (2001), doi: 10.1016/S0921-4526(01)00737-2
• [7] M. Mikelsen, E.V. Monakhov, G. Alfieri, B.S. Avset, J. Härkönen, G. Svensson, J. Phys. Condens. Matter 17, S2247 (2005), doi: 10.1088/0953-8984/17/22/012
• [8] V.P. Markevich, A.R. Peaker, S.B. Lastovskii, L.I. Murin, J. Coutinho, V.J.B. Torres, P.R. Briddon, L. Dobaczewski, E.V. Monakhov, B.G. Svensson, Phys. Rev. B 80, 235207 (2009), doi: 10.1103/PhysRevB.80.235207
• [9] A.G. Milnes, Deep Impurities in Semiconductors, Wiley, New York 1973
• [10] N.A. Poklonski, N.I. Gorbachuk, S.V. Shpakovski, S.B. Lastovskii, A. Wieck, Semiconductors 44, 380 (2010), doi: 10.1134/S1063782610030188
• [11] Impedance Spectroscopy: Theory Experiment and Applications, Eds. E. Barsoukov, J.R. Macdonald, Wiley, New York 2005
• [12] N.A. Poklonski, N.I. Gorbachuk, S.V. Shpakovski, A. Wieck, Techn. Phys. 55, 1463 (2010), doi: 10.1134/S1063784210100117

Identifiers

DOI

10.12693/APhysPolA.128.891