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Abstracts
Silicon diodes irradiated with helium ions with energies of 4.1, 6.8 and 8.9 MeV are studied. It is shown that the mechanism determining the behaviour of frequency dependence of complex electric module and correspondingly the behavior of impedance of diodes irradiated with helium ions in the frequency region 3-200 kHz is a recharging of vacancy complexes localized in the space charge region.
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Journal
Year
Volume
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Pages
891-893
Physical description
Dates
published
2015-11
Contributors
author
- Belarusian State University, 4 Nezavisimosti Pr., BY-220030, Minsk, Belarus
author
- Belarusian State University, 4 Nezavisimosti Pr., BY-220030, Minsk, Belarus
author
- Belarusian State University, 4 Nezavisimosti Pr., BY-220030, Minsk, Belarus
author
- JSC "INTEGRAL", 121A Kazintsa Str., BY-220108, Minsk, Belarus
author
- JSC "INTEGRAL", 121A Kazintsa Str., BY-220108, Minsk, Belarus
author
- Joint Institute for Nuclear Research, 6 Joliot-Curie Str., RU-141980 Dubna, Russia
author
- Lublin University of Technology, Nadbystrzycka 38d, 20-618 Lublin, Poland
author
- Ruhr-University Bochum, 150 Universitaets Str., D-44780 Bochum, Germany
author
- Ruhr-University Bochum, 150 Universitaets Str., D-44780 Bochum, Germany
author
- Ruhr-University Bochum, 150 Universitaets Str., D-44780 Bochum, Germany
References
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- [8] V.P. Markevich, A.R. Peaker, S.B. Lastovskii, L.I. Murin, J. Coutinho, V.J.B. Torres, P.R. Briddon, L. Dobaczewski, E.V. Monakhov, B.G. Svensson, Phys. Rev. B 80, 235207 (2009), doi: 10.1103/PhysRevB.80.235207
- [9] A.G. Milnes, Deep Impurities in Semiconductors, Wiley, New York 1973
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- [12] N.A. Poklonski, N.I. Gorbachuk, S.V. Shpakovski, A. Wieck, Techn. Phys. 55, 1463 (2010), doi: 10.1134/S1063784210100117
Document Type
Publication order reference
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YADDA identifier
bwmeta1.element.bwnjournal-article-appv128n520kz