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2015 | 128 | 5 | 891-893
Article title

Influence of Defects Introduced by Irradiation with 4-9 MeV Helium Ions on Impedance of Silicon Diodes

Content
Title variants
Languages of publication
EN
Abstracts
EN
Silicon diodes irradiated with helium ions with energies of 4.1, 6.8 and 8.9 MeV are studied. It is shown that the mechanism determining the behaviour of frequency dependence of complex electric module and correspondingly the behavior of impedance of diodes irradiated with helium ions in the frequency region 3-200 kHz is a recharging of vacancy complexes localized in the space charge region.
Keywords
EN
Year
Volume
128
Issue
5
Pages
891-893
Physical description
Dates
published
2015-11
References
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Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv128n520kz
Identifiers
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