Modification of MOS Devices by High-Field Electron Injection and Arc Plasma Jet Treatment

• Authors: V. Andreev , G. Bondarenko , V. Maslovsky , A. Stolyarov
• Languages of publication: EN

Abstracts

EN

Methods of modification of gate dielectrics of the MOS structures by high-field electron injection and arc plasma jet treatment were studied. It is possible to use them for correction of parameters, decreasing defects number and increasing reliability of MOS devices. It was found that the negative charge accumulated in the film of the phosphorus-silicate glass of the MOS structures with the two-layer gate dielectric SiO₂-phosphorus-silicate glass under the high-field electron injection can be used for modification of devices with the same structures. It is shown that the injection-thermal treatment allows to find and exclude MOS structures with defects of isolation and charge defects. Arc plasma jet treatment was found to improve characteristics of the MOS devices. These treatments increase injection and radiation resistance of the gate dielectric by creating the needed density of electron traps in the bulk of SiO₂ film.

Keywords

EN

73.40.Qv; 73.40.Gk

Discipline

• 73.40.Gk: Tunneling(for tunneling in quantum Hall effects, see 73.43.Jn)
• 73.40.Qv: Metal-insulator-semiconductor structures (including semiconductor-to-insulator)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2015
• Volume: 128
• Issue: 5
• Pages: 887-890

Dates

published

2015-11

Contributors

author

V. Andreev

• Bauman Moscow State Technical University, Kaluga Branch 2, Bazhenov St., Kaluga, 248000, Russia

author

G. Bondarenko

• National Research University, Higher School of Economics, 20, Myasnitskaya Str., Moscow 101000, Russia

author

V. Maslovsky

• Zelenograd Research Institute of Physical Problems, Moscow, 124460, Russia

author

A. Stolyarov

• Bauman Moscow State Technical University, Kaluga Branch 2, Bazhenov St., Kaluga, 248000, Russia

References

• [1] S. Lombardo, J.H. Stathis, P. Linder, K.L. Pey, F. Palumbo, C.H. Tung, J. Appl. Phys. 98, 121301 (2005), doi: 10.1063/1.2147714
• [2] V.V. Afanas'ev, A. Stesmans, J. Appl. Phys. 102, 081301 (2007), doi: 10.1063/1.2799091
• [3] V.A. Gritsenko, Phys.-Usp. 52, 869 (2009), doi: 10.3367/UFNe.0179.200909a.0921
• [4] G.G. Bondarenko, V.V. Andreev, V.M. Maslovsky, A.A. Stolyarov, V.E. Drach, Thin Solid Films 427, 377 (2003), doi: 10.1016/S0040-6090(02)01146-X
• [5] G.G. Bondarenko, V.V. Andreev, V.E. Drach, S.A. Loskutov, M.A. Stolyarov, Thin Solid Films 515, 670 (2006), doi: 10.1016/j.tsf.2005.12.236
• [6] V.V. Andreev, G.G. Bondarenko, V.M. Maslovsky, A.A. Stolyarov, Acta Phys. Pol. A 125, 1371 (2014), doi: 10.12693/APhysPolA.125.1371
• [7] V.V. Andreev, G.G. Bondarenko, V.M. Maslovsky, A.A. Stolyarov, IOP Conf. Ser. Mater. Sci. Eng. 41, 012017 (2012), doi: 10.1088/1757-899X/41/1/012017
• [8] United States Military Standard MIL-STD-883H Method 1019.8

Identifiers

DOI

10.12693/APhysPolA.128.887