EN
The present paper investigates the temperature/frequency dependences of admittance Z in the granular Cu_x(SiO₂)_{1-x} nanocomposite films around the percolation threshold x_{C} in the temperature range of 4-300 K and frequencies of 20-10⁶ Hz. The behavior of low-frequency ReZ(T) dependences displayed the predominance of electrons hopping between the closest Cu-based nanoparticles for the samples below the percolation threshold x_{C} ≈ 0.59 and nearly metallic behaviour beyond the x_{C}. The high-frequency curves ReZ(f) at temperatures T > 10 K for the samples with x < x_{C} exhibited behavior close to ReZ(f) ≈ f^{-s} with s ≈ 1.0 which is very similar to the known Mott law for electron hopping mechanism. For the samples beyond the percolation threshold (x > x_{C}), the frequency dependences of ReZ(f) displayed inductive-like (not capacitive) behaviour with positive values of the phase shift angles.