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2015 | 128 | 5 | 883-886
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Mechanisms of Carrier Transport in Cu_x(SiO₂)_{1-x} Nanocomposites Manufactured by Ion-Beam Sputtering with Ar Ions

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The present paper investigates the temperature/frequency dependences of admittance Z in the granular Cu_x(SiO₂)_{1-x} nanocomposite films around the percolation threshold x_{C} in the temperature range of 4-300 K and frequencies of 20-10⁶ Hz. The behavior of low-frequency ReZ(T) dependences displayed the predominance of electrons hopping between the closest Cu-based nanoparticles for the samples below the percolation threshold x_{C} ≈ 0.59 and nearly metallic behaviour beyond the x_{C}. The high-frequency curves ReZ(f) at temperatures T > 10 K for the samples with x < x_{C} exhibited behavior close to ReZ(f) ≈ f^{-s} with s ≈ 1.0 which is very similar to the known Mott law for electron hopping mechanism. For the samples beyond the percolation threshold (x > x_{C}), the frequency dependences of ReZ(f) displayed inductive-like (not capacitive) behaviour with positive values of the phase shift angles.
  • Belarusian State University, 220030, Minsk, Belarus
  • Belarusian State University, 220030, Minsk, Belarus
  • Belarusian State University, 220030, Minsk, Belarus
  • Al Balqa Applied University, Physics Department, P.O. Box 4545, Amman 11953, Jordan
  • Scientific-Practical Material Research Centre NAS of Belarus, 220040 Minsk, Belarus
  • Lublin University of Technology, 20-618 Lublin, Poland
  • Lublin University of Technology, 20-618 Lublin, Poland
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