Fabrication and Characterization of Transparent Tin Dioxide Films with Variable Stoichiometric Composition

• Authors: V. Ksenevich , D. Adamchuk , V. Odzhaev , P. Zukowski
• Languages of publication: EN

Abstracts

EN

Tin dioxide films with variable stoichiometric composition were fabricated by means of dc magnetron sputtering followed by a 2-stage annealing process. The structural and electrical properties of tin dioxide films were investigated by means of the Raman spectroscopy and impedance spectroscopy, respectively. It was found that crystallinity and grain size of tin dioxide films increase with the increasing annealing temperature. The most conductive samples were obtained at the annealing temperature 375°C. Increasing of the impedance of films annealed at higher temperatures is explained by decrease of the concentration of oxygen vacancies.

Keywords

EN

73.61.Le; 78.30.-j; 81.15.Cd

Discipline

• 73.61.Le: Other inorganic semiconductors
• 78.30.-j: Infrared and Raman spectra(for vibrational states in crystals and disordered systems, see 63.20.-e and 63.50.-x, respectively; for Raman spectra of superconductors, see 74.25.nd)
• 81.15.Cd: Deposition by sputtering

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2015
• Volume: 128
• Issue: 5
• Pages: 861-863

Dates

published

2015-11

Contributors

author

V. Ksenevich

• Department of Physics, Belarusian State University, Nezalezhnastsi ave. 4, 220030 Minsk, Belarus

author

D. Adamchuk

• Department of Physics, Belarusian State University, Nezalezhnastsi ave. 4, 220030 Minsk, Belarus

author

V. Odzhaev

• Department of Physics, Belarusian State University, Nezalezhnastsi ave. 4, 220030 Minsk, Belarus

author

P. Zukowski

• Lublin University of Technology, Nadbystrzycka 38d, 20-618 Lublin, Poland

References

• [1] S. Mathur, S. Barth, H. Shen, J.C. Pyun, U. Werner, Small 1, 713 (2005), doi: 10.1002/smll.200400168
• [2] M. Batzill, U. Diebold, Prog. Surf. Sci. 79, 47 (2005), doi: 10.1016/j.progsurf.2005.09.002
• [3] A. Dieguez, A. Romano-Rodriguez, A. Vila, J.R. Morante, J. Appl. Phys. 90, 1550 (2001), doi: 10.1063/1.1385573
• [4] M.E. Striefler, G.R. Borschi, Phys. Status Solidi B 67, 143 (1975), doi: 10.1002/pssb.2220670113
• [5] T. Sato, T. Asari, J. Phys. Soc. Jpn. 64, 1193 (1995), doi: 10.1143/JPSJ.64.1193
• [6] L. Abello, B. Bochu, A. Gaskov, S. Koudryavtseva, G. Lucazeau, M. Roumyantesva, J. Solid State Chem. 135, 78 (1998), doi: 10.1006/jssc.1997.7596
• [7] E.L. Peltzer y Blanka, A. Svane, N.E. Christensen, C.O. Rodriguez, O.M. Cappannini, M.S. Moreno, Phys. Rev. B 48, 15712 (1993), doi: 10.1103/PhysRevB.48.15712
• [8] I.D. Raistrick, D.R. Franceschetti, J.R. Macdonald, in: Impedance Spectroscopy: Theory, Experiment, and Applications, Eds. E. Barsoukov, J.R. Macdonald, Wiley, Hoboken, NJ 2005, p. 27
• [9] K.G. Godinho, A. Walsh, G.W. Watson, J. Phys. Chem. C 113, 439 (2009), doi: 10.1021/jp807753t
• [10] M. Sluyters-Rehbach, Pure Appl. Chem. 66, 1831 (1994), doi: 10.1351/pac199466091831

Identifiers

DOI

10.12693/APhysPolA.128.861