Simulation of Radiation Effects in SiO₂/Si Structures

• Authors: F. Komarov , G. Zayats , A. Komarov , S. Miskiewicz , V. Michailov , H. Komsta
• Languages of publication: EN

Abstracts

EN

The space-time evolution of electric charge induced in the dielectric layer of simulated metal-insulator-semiconductor structures due to irradiation with X-rays is discussed. The system of equations used as a basis for the simulation model is solved iteratively by the efficient numerical method. The obtained simulation results correlate well with the respective data presented in other scientific publications.

Keywords

EN

02.30.Hq; 02.60.Cb

Discipline

• 02.60.Cb: Numerical simulation; solution of equations
• 02.30.Hq: Ordinary differential equations

• Journal: Acta Physica Polonica A
• Year: 2015
• Volume: 128
• Issue: 5
• Pages: 857-860

Dates

published

2015-11

Contributors

author

F. Komarov

• Institute of Applied Physics Problems, 7 Kurchatov Str., 220045 Minsk, Belarus

author

G. Zayats

• Institute of Mathematics, National Academy of Sciences of Belarus, 11 Surganov Str., 220072 Minsk, Belarus

author

A. Komarov

• Institute of Applied Physics Problems, 7 Kurchatov Str., 220045 Minsk, Belarus

author

S. Miskiewicz

• Institute of Applied Physics Problems, 7 Kurchatov Str., 220045 Minsk, Belarus

author

V. Michailov

• Institute of Applied Physics Problems, 7 Kurchatov Str., 220045 Minsk, Belarus

author

H. Komsta

• Lublin University of Technology, Nadbystrzycka 36, 20-618 Lublin, Poland

References

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Identifiers

DOI

10.12693/APhysPolA.128.857