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2015 | 128 | 5 | 845-848
Article title

Channeling Study of Co and Mn Implanted and Thermally Annealed Wide Band-Gap Semiconducting Compounds

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EN
Abstracts
EN
The defect build-up, structure recovery and lattice location of transition metals in ion bombarded and thermally annealed ZnO and GaN single crystals were studied by channeled Rutherford backscattering spectrometry and channeled particle-induced X-ray emission measurements using 1.57 MeV ⁴He ions. Ion implantation to a fluence of 1.2×10¹⁶ ions/cm² was performed using 120 keV Co and 120 keV Mn ions. Thermal annealing was performed at 800°C in argon flow. Damage distributions were determined using the Monte Carlo McChasy simulation code. The simulations of channeled Rutherford backscattering spectra reveal that the ion implantation leads to formation of two types of defect structures in ZnO and GaN such as point and extended defects, such as dislocations. The concentrations of both types of defects are at a comparable level in both structures and for both implanted ions. Differences between both implantations appear after thermal annealing where the Mn-doped ZnO reveals much better transition metals substitution and recovery effect.
Keywords
Discipline
Year
Volume
128
Issue
5
Pages
845-848
Physical description
Dates
published
2015-11
Contributors
author
  • National Centre for Nuclear Research, A. Sołtana 7, 05-400 Otwock, Poland
author
  • National Centre for Nuclear Research, A. Sołtana 7, 05-400 Otwock, Poland
author
  • National Centre for Nuclear Research, A. Sołtana 7, 05-400 Otwock, Poland
  • National Centre for Nuclear Research, A. Sołtana 7, 05-400 Otwock, Poland
author
  • National Centre for Nuclear Research, A. Sołtana 7, 05-400 Otwock, Poland
author
  • Instituut voor Kern-en Stralingsfysica, KU Leuven, 3001 Leuven, Belgium
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv128n508kz
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