Grain-Subgrain Structure and Vacancy-Type Defects in Submicrocrystalline Nickel at Low Temperature Annealing

• Authors: P. Kuznetsov , A. Lider , Yu. Bordulev , R. Laptev , T. Rakhmatulina , A. Korznikov
• Languages of publication: EN

Abstracts

EN

Scanning tunneling microscopy, positron annihilation and X-ray diffraction were applied for the study of annealing of submicrocrystalline nickel prepared by equal channel angular pressing. Several processes were revealed in the structure of submicrocrystalline nickel on different scale levels during annealing in the range Δ T=(20÷360)°C. A decrease of grain nonequiaxiality and further structure refinement were observed with a temperature increase in the range Δ T=(20÷180)°C. Subgrain growth with maximum =60 nm at 120°C occurred on the lower scale level within the same temperature range. Grain growth and microstress decrease in submicrocrystalline nickel observed at T>180°C indicate the beginning of recrystallization. The main positron trap centers were identified in submicrocrystalline nickel within different temperature ranges. In as-prepared samples positrons are trapped at dislocation-type defects and vacancy clusters that can include up to 5 vacancies. At the annealing temperature Δ T=(20÷180)°C positrons are trapped at low-angle boundaries enriched by impurities. Within the range Δ T=(180÷360)°C the dominant trap is dislocations.

Keywords

EN

68.37.Ef; 61.72.J-; 61.72.Lk; 61.72.-y; 81.40.Ef; 78.70.Bj

Discipline

• 78.70.Bj: Positron annihilation(for positron states, see 71.60.+z in electronic structure of bulk materials; for positronium chemistry, see 82.30.Gg in physical chemistry and chemical physics)
• 81.40.Ef: Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization
• 61.72.Lk: Linear defects: dislocations, disclinations
• 68.37.Ef: Scanning tunneling microscopy (including chemistry induced with STM)
• 61.72.J-: Point defects and defect clusters
• 61.72.-y: Defects and impurities in crystals; microstructure(for radiation induced defects, see 61.80.-x; for defects in surfaces, interfaces, and thin films, see 68.35.Dv and 68.55.Ln; see also 85.40.Ry Impurity doping, diffusion, and ion implantation technology; for effects of crystal defects and doping on superconducting transition temperature, see 74.62.Dh)

• Journal: Acta Physica Polonica A
• Year: 2015
• Volume: 128
• Issue: 4
• Pages: 714-717

Dates

published

2015-10

Contributors

author

P. Kuznetsov

• National Research Tomsk Polytechnic University, Tomsk, Russia
• Institute of Strength Physics and Materials Science, Siberian Branch of RAS, Tomsk, Russia

author

A. Lider

• National Research Tomsk Polytechnic University, Tomsk, Russia

author

Yu. Bordulev

• National Research Tomsk Polytechnic University, Tomsk, Russia

author

R. Laptev

• National Research Tomsk Polytechnic University, Tomsk, Russia

author

T. Rakhmatulina

• Institute of Strength Physics and Materials Science, Siberian Branch of RAS, Tomsk, Russia

author

A. Korznikov

• Institute for Metals Superplasticity Problems of Russian Academy of Sciences, Ufa, Russia

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Identifiers

DOI

10.12693/APhysPolA.128.714