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2015 | 128 | 3 | 431-439
Article title

Study of Ti, V and Their Oxides-Based Thin Films in the Search for Hydrogen Storage Materials

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Abstracts
EN
Thin film series consisting of Ti, V, TiO₂ and V₂O₅ layer with different layer geometries, sequences and thicknesses have been prepared by the sputtering technique. The hydrogen depth profile of selected films upon hydrogen charging at 1 bar and/or hydrogenation at pressure up to 102 bar was determined by using secondary ion mass spectrometry and nuclear reaction analysis using a N-15 beam. The highest hydrogen storage with a concentration up to 50 at.% was found in the pure Ti and Ti-contained layer, while it amounts to around 30% in the metallic Ti-V-Ni layer. Hydrogen can diffuse through the TiO₂ layer without accumulation, but can be stored in the VO₂ layer in some cases. Hydrogen can remove the preferential Ti orientation in the films and induce a complete transition of V₂O₅ into VO₂ in the films.
Keywords
Contributors
author
  • Faculty of Physics and Applied Computer Science, AGH University of Science and Technology, al. A. Mickiewicza 30, 30-059 Kraków, Poland
author
  • Faculty of Computer Science, Electronics and Telecommunication, AGH University of Science and Technology, al. A. Mickiewicza 30, 30-059 Kraków, Poland
  • Institute of Physics, Pedagogical University, 30-084 Kraków, Poland
author
  • Institute of Physics, Pedagogical University, 30-084 Kraków, Poland
author
  • Institute of Physics, Pedagogical University, 30-084 Kraków, Poland
author
  • Faculty of Physics and Applied Computer Science, AGH University of Science and Technology, al. A. Mickiewicza 30, 30-059 Kraków, Poland
author
  • Faculty of Mathematics and Physics, Charles University, Ke Karlovu 5, 12116 Prague, Czech Republic
author
  • Institute of Materials Science, Technische Universität Darmstadt, 64287 Darmstadt, Germany
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv128n334kz
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