Electronic Properties of Cu/n-InP Metal-Semiconductor Structures with Cytosine Biopolymer

• Authors: Ö. Güllü , A. Türüt
• Languages of publication: EN

Abstracts

EN

This work shows that cytosine biomolecules can control the electrical characteristics of conventional Cu/n-InP metal-semiconductor contacts. A new Cu/n-InP Schottky junction with cytosine interlayer has been formed by using a drop cast process. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics of Cu/cytosine/n-InP structure were investigated at room temperature. A potential barrier height as high as 0.68 eV has been achieved for Cu/cytosine/n-InP Schottky diodes, which have good I-V characteristics. This good performance is attributed to the effect of interfacial biofilm between Cu and n-InP. By using C-V measurement of the Cu/cytosine/n-InP Schottky diode the diffusion potential and the barrier height have been calculated as a function of frequency. Also, the interface-state density of the Cu/cytosine/n-InP diode was found to vary from 2.24×10^{13} eV^{-1} cm^{-2} to 5.56×10^{12} eV^{-1} cm^{-2}.

Keywords

EN

73.40.-c; 73.30.+y

Discipline

• 73.40.-c: Electronic transport in interface structures
• 73.30.+y: Surface double layers, Schottky barriers, and work functions(see also 82.45.Mp Thin layers, films, monolayers, membranes in electrochemistry; see also 87.16.D- Membranes, bilayers, and vesicles in biological physics)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2015
• Volume: 128
• Issue: 3
• Pages: 383-388

Dates

published

2015-09

received

2015-01-05

(unknown)

2015-06-03

(unknown)

2015-06-11

Contributors

author

Ö. Güllü

• Batman University, Faculty of Sciences and Arts, Department of Physics, Batman, Turkey

author

A. Türüt

• Istanbul Medeniyet University, Faculty of Sciences, Department of Engineering Physics, 34000 Istanbul, Turkey

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Identifiers

DOI

10.12693/APhysPolA.128.383