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2015 | 128 | 3 | 383-388
Article title

Electronic Properties of Cu/n-InP Metal-Semiconductor Structures with Cytosine Biopolymer

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EN
Abstracts
EN
This work shows that cytosine biomolecules can control the electrical characteristics of conventional Cu/n-InP metal-semiconductor contacts. A new Cu/n-InP Schottky junction with cytosine interlayer has been formed by using a drop cast process. The current-voltage (I-V) and capacitance-voltage (C-V) characteristics of Cu/cytosine/n-InP structure were investigated at room temperature. A potential barrier height as high as 0.68 eV has been achieved for Cu/cytosine/n-InP Schottky diodes, which have good I-V characteristics. This good performance is attributed to the effect of interfacial biofilm between Cu and n-InP. By using C-V measurement of the Cu/cytosine/n-InP Schottky diode the diffusion potential and the barrier height have been calculated as a function of frequency. Also, the interface-state density of the Cu/cytosine/n-InP diode was found to vary from 2.24×10^{13} eV^{-1} cm^{-2} to 5.56×10^{12} eV^{-1} cm^{-2}.
Keywords
EN
Year
Volume
128
Issue
3
Pages
383-388
Physical description
Dates
published
2015-09
received
2015-01-05
(unknown)
2015-06-03
(unknown)
2015-06-11
References
  • [1] P. Tran, B. Alavi, G. Gruner, Phys. Rev. Lett. 85, 1564 (2000), doi: 10.1103/PhysRevLett.85.1564
  • [2] H.-W. Fink, C. Schenenberger, Nature 398, 407 (1999), doi: 10.1038/18855
  • [3] S.D. Silaghi, G. Salvan, M. Friedrich, T.U. Kampen, R. Scholz, D.R.T. Zahn, Appl. Surf. Sci. 235, 73 (2004), doi: 10.1016/j.apsusc.2004.05.272
  • [4] D. Porath, A. Bezryadin, S. de Vries, C. Dekker, Nature 403, 635 (2000), doi: 10.1038/35001029
  • [5] Z. Kutnjak, C. Filipic, R. Podgornik, L. Norgenskiold, N. Korolev, Phys. Rev. Lett. 90, 98101 (2003), doi: 10.1103/PhysRevLett.90.098101
  • [6] Y. Zhang, R.H. Austin, J. Kraeft, E.C. Cox, P. Ong, Phys. Rev. Lett. 89, 198102 (2002), doi: 10.1103/PhysRevLett.89.198102
  • [7] Y. Matsuo, G. Kumasaka, K. Saito, S. Ikehata, Solid State Commun. 133, 61 (2005), doi: 10.1016/j.ssc.2004.09.055
  • [8] V. Kazukauskas, M. Pranaitis, A. Arlauskas, O. Krupka, F. Kajzar, Z. Essaidi, B. Sahraoui, Opt. Mater. 32, 1629 (2010), doi: 10.1016/j.optmat.2010.05.014
  • [9] O. Krupka, A. El-Ghayoury, I. Rau, B. Sahraoui, J.G. Grote, F. Kajzar, Thin Solid Films 516, 8932 (2008), doi: 10.1016/j.tsf.2007.11.089
  • [10] J.G. Grote, J.A. Hagen, J.S. Zetts, R.L. Nelson, D.E. Diggs, M.O. Stone, P.P. Yaney, E. Heckman, C. Zhang, W.H. Steier, A.K.-Y. Jen, L.R. Dalton, N. Ogata, M.J. Curley, S.J. Clarson, F.K. Hopkins, J. Phys. Chem. B 108, 8584 (2004), doi: 10.1021/jp038056d
  • [11] H.-W. Fink, H. Schmid, E. Ermantraut, T. Schulz, J. Opt. Soc. Am. A 14, 2168 (1997), doi: 10.1364/JOSAA.14.002168
  • [12] R. Czaplicki, O. Krupka, Z. Essaidi, A. El-Ghayoury, F. Kajzar, J.G. Grote, B. Sahraoui, Opt. Express 15, 15268 (2007), doi: 10.1364/OE.15.015268
  • [13] B. Singh, N.S. Sariciftci, J.G. Grote, F.K. Hopkins, J. Appl. Phys. 100, 024514 (2006), doi: 10.1063/1.2220488
  • [14] D.D. Eley, D.I. Spivey, Trans. Faraday Soc. 58, 411 (1962), doi: 10.1039/TF9625800411
  • [15] J. Wang, Phys. Rev. B 78, 245304 (2008), doi: 10.1103/PhysRevB.78.245304
  • [16] E. Di Mauro, C.P. Hollenberg, Adv. Mater. 5, 384 (1993), doi: 10.1002/adma.19930050512
  • [17] C.M. Niemeyer, Angew. Chem. Int. Ed. 40, 4128 (2001), doi: 10.1002/1521-3773(20011119)40:22<4128::AID-ANIE4128>3.0.CO;2-S
  • [18] D. Porath, G. Cuniberti, R.D. Felice, Top. Curr. Chem. 237, 183 (2004), doi: 10.1007/b94477
  • [19] H.M. McConnell, J. Chem. Phys. 35, 508 (1961), doi: 10.1063/1.1731961
  • [20] R.E. Holmlin, P.J. Dandliker, J.K. Barton, Angew. Chem. Int. Ed. Engl. 36, 2714 (1997), doi: 10.1002/anie.199727141
  • [21] C.R. Treadway, M.G. Hill, J.K. Barton, Chem. Phys. 281, 409 (2002), doi: 10.1016/S0301-0104(02)00447-0
  • [22] http://www.worldofmolecules.com/life/cytosine.htm (03.06.2015)
  • [23] http://en.wikipedia.org/wiki/Cytosine (03.06.2015)
  • [24] Y. Sakamoto, T. Sugino, T. Miyazaki, J. Shirafuji, Electron. Lett. 31, 1104 (1995), doi: 10.1049/el:19950756
  • [25] T. Sugino, H. Ito, J. Shirafuji, Electron. Lett. 26, 1750 (1990), doi: 10.1049/el:19901124
  • [26] M.J. Cardwell, R.F. Peart, Electron. Lett. 9, 88 (1973), doi: 10.1049/el:19730066
  • [27] O. Gullu, Microelectron. Eng. 87, 648 (2010), doi: 10.1016/j.mee.2009.09.001
  • [28] H. Cetin, E. Ayyildiz, A. Turut, J. Vac. Sci. Technol. B 23, 2436 (2005), doi: 10.1116/1.2126675
  • [29] R.K. Gupta, R.A. Singh, J. Polym. Res. 11, 269 (2004), doi: 10.1007/s10965-005-2412-2
  • [30] O. Gullu, A. Turut, Sol. Energy Mater. Sol. Cells 92, 1205 (2008), doi: 10.1016/j.solmat.2008.04.009
  • [31] T.S. Shafai, Thin Solid Films 517, 1200 (2008), doi: 10.1016/j.tsf.2008.06.009
  • [32] O. Gullu, M. Cankaya, O. Baris, A. Turut, Appl. Phys. Lett. 92, 212106 (2008), doi: 10.1063/1.2936086
  • [33] Y. Qiu, J. Qiao, Thin Solid Films 372, 265 (2000), doi: 10.1016/S0040-6090(00)01007-5
  • [34] E.H. Rhoderick, R.H. Williams, Metal-Semiconductor Contacts, 2nd ed., Clarendon Press, Oxford 1988
  • [35] R.F. Schmitsdorf, T.U. Kampen, W. Monch, J. Vac. Sci. Technol. B 15, 1221 (1997), doi: 10.1116/1.589442
  • [36] F.E. Jones, B.P. Wood, J.A. Myers, C.H. Daniels, M.C. Lonergan, J. Appl. Phys. 86, 6431 (1999), doi: 10.1063/1.371707
  • [37] R.K. Gupta, R.A. Singh, Mater. Chem. Phys. 86, 279 (2004), doi: 10.1016/j.matchemphys.2004.03.003
  • [38] A.R.V. Roberts, D.A. Evans, Appl. Phys. Lett. 86, 072105 (2005), doi: 10.1063/1.1864255
  • [39] M. Cakar, N. Yildirim, S. Karatas, C. Temirci, A. Turut, J. Appl. Phys. 100, 074505 (2006), doi: 10.1063/1.2355547
  • [40] S. Aydogan, M. Saglam, A. Turut, Microelectron. Eng. 85, 278 (2008), doi: 10.1016/j.mee.2007.06.004
  • [41] S. Karatas, S. Altindal, A. Turut, M. Cakar, Physica B 392, 43 (2007), doi: 10.1016/j.physb.2006.10.039
  • [42] O. Gullu, S. Aydogan, A. Turut, Microelectron. Eng. 85, 1647 (2008), doi: 10.1016/j.mee.2008.04.003
  • [43] Ş. Aydoğan, M. Sağlam, A. Türüt, Y. Onganer, Mater. Sci. Eng. C 29, 1486 (2009), doi: 10.1016/j.msec.2008.12.006
  • [44] H. Norde, J. Appl. Phys. 50, 5052 (1979), doi: 10.1063/1.325607
  • [45] H.C. Card, E.H. Rhoderick, J. Phys. D 4, 1589 (1971), doi: 10.1088/0022-3727/4/10/319
  • [46] O. Gullu, S. Asubay, S. Aydogan, A. Turut, Physica E 42, 1411 (2010), doi: 10.1016/j.physe.2009.11.079
  • [47] S. Aydogan, M. Saglam, A. Turut, Polymer 46, 10982 (2005), doi: 10.1016/j.polymer.2005.09.038
  • [48] A. Turut, N. Yalcin, M. Saglam, Solid State Electron. 35, 835 (1992), doi: 10.1016/0038-1101(92)90286-L
  • [49] D.A. Vandenbroucke, R.L. Van Meirhaeghe, W.H. Laflere, F. Cardon, J. Phys. D Appl. Phys. 18, 731 (1985), doi: 10.1088/0022-3727/18/4/017
  • [50] J. Osvald, J. Appl. Phys. 85, 1935 (1999), doi: 10.1063/1.369185
  • [51] E. Ayyildiz, C. Temirci, B. Bati, A. Türüt, Int. J. Electron. 88, 625 (2001), doi: 10.1080/00207210110044396
  • [52] S. Asubay, Ö. Güllü, Int. J. Electron. 97, 973 (2010)
Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv128n326kz
Identifiers
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