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2015 | 128 | 3 | 283-288
Article title

Optical and Electrical Characterization of (002)-Preferentially Oriented n-ZnO/p-Si Heterostructure

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EN
Abstracts
EN
In this paper, preferentially oriented (002) ZnO thin films have been grown on Si (100) and glass substrates using radio frequency magnetron sputtering. The dependence of the quality of the ZnO thin films at different substrate temperatures on the growth is studied. A ZnO thin film with c-axis-oriented würtzite structure is obtained at a growth temperature from 200 to 400°C. X-ray diffraction shows that the full width at half maximum θ -2θ of (002) ZnO/Si is located at approximately 34.42°, which is used to infer the grain size that is found to be 17 nm to 19.7 nm. The FWHM is 9.5° to 8° in rocking curve mode, from which the crystalline quality has been determined. The texture degree demonstrates the improvement in quality with the increase of substrate temperature, which is best at 400°C. The band gap extracted by UV transmittance spectrum has been identified as 3.2 eV at 400°C. The electrical characteristics via C-V and I-V measurements on the basis of the heterojunction thermal emission model confirm the domination of high-density grain boundary layer existing at the interface. The transport currents indicate to the presence of space-charge-limited current and trap-charge-limited current mechanisms.
Keywords
EN
Year
Volume
128
Issue
3
Pages
283-288
Physical description
Dates
published
2015-09
received
2015-01-28
(unknown)
2015-05-05
(unknown)
2015-06-01
Contributors
author
  • Department of Physics, Atomic Energy Commission of Syria, P.O. Box 6091, Damascus, Syria
author
  • Department of Physics, Atomic Energy Commission of Syria, P.O. Box 6091, Damascus, Syria
References
  • [1] Z.A. Wang, J.B. Chu, H.B. Zhu, Z. Sun, Y.W. Chen, S.M. Huang, Solid State Electron. 53, 1149 (2009), doi: 10.1016/j.sse.2009.07.006
  • [2] B.Y. Oh, M.C. Jeong, T.H. Moon, W. Lee, J.M. Myoung, J.Y. Hwang, D.S. Seo, J. Appl. Phys. 99, 124505 (2006), doi: 10.1063/1.2206417
  • [3] S.J. Pearton, W.T. Lim, J.S. Wright, L.C. Tien, H.S. Kim, D.P. Norton, H.T. Wang, B.S. Kang, F. Ren, J. Jun, J. Lin, A. Osinsky, J. Electron. Mater. 37, 1426 (2008), doi: 10.1007/s11664-008-0416-5
  • [4] R.L. Hoffman, B.J. Norris, J.F. Wager, Appl. Phys. Lett. 82, 733 (2003), doi: 10.1063/1.1542677
  • [5] J. Zhu, H. Chen, G. Saraf, Z. Duan, Y. Lu, S.T. Hsu, J. Electron. Mater. 37, 1237 (2008), doi: 10.1007/s11664-008-0457-9
  • [6] V.R. Shinde, T.P. Gujar, C.D. Lokhande, Sens. Actuat. B 123, 701 (2007), doi: 10.1016/j.snb.2006.10.003
  • [7] P.K. Basu, P. Battacharyya, N. Saha, H. Saha, S. Basu, Sens. Actuat. B 133, 357 (2008), doi: 10.1016/j.snb.2008.02.035
  • [8] P.P. Sahay, R.K. Nath, Sens. Actuat. B 134, 654 (2008), doi: 10.1016/j.snb.2008.06.006
  • [9] P.S. Cho, K.W. Kim, J.H. Lee, J. Electroceram. 17, 975 (2006), doi: 10.1007/s10832-006-8146-7
  • [10] Z. Bi, J.W. Zhang, X.M. Bian, D. Wang, X. Zhang, W.F. Zhang, X. Hou, J. Electron. Mater. 37, 760 (2008), doi: 10.1007/s11664-007-0329-8
  • [11] M.A. Green, Prog. Photovolt. Res. Appl. 17, 347 (2009), doi: 10.1002/pip.899
  • [12] S. Fay, S. Dubail, U. Kroll, J. Meier, Y. Zeigler, A. Shah, in: Proc. 16th Photovoltaic Solar Energy Conf., Ed. H. Scheer, Taylor and Francis, Glasgow 2000, p. 362
  • [13] K. Kushiya, M. Ohshita, I. Hara, Y. Tanaka, B. Sang, Y. Nagoya, M. Tachiyuki, O.`Yamase, En. Mater. Sol. Cells. 75, 171 (2003), doi: 10.1016/S0927-0248(02)00144-7
  • [14] D.C. Look, Mater. Sci. Eng. B 80, 383 (2001), doi: 10.1016/S0921-5107(00)00604-8
  • [15] A.B. Djurisic, Y. Chan, E.H. Li, Mater. Sci. Eng. R 38, 237 (2002), doi: 10.1016/S0927-796X(02)00063-3
  • [16] S. Bensmaine, L. Le Brizoual, O. Elmazria, B. Assouar, B. Benyoucef, J. Electron Dev. 5, 104 (2007)
  • [17] J.H. Lee, K.H. Ko, B.O. Park, J. Cryst. Growth 247, 119 (2003), doi: 10.1016/S0022-0248(02)01907-3
  • [18] P. Nunes, E. Fortunato, R. Martins, Int. J. Inorg. Mater. 3, 1125 (2001), doi: 10.1016/S1466-6049(01)00113-1
  • [19] S. Rahmane, M.A. Djouadi, M.S. Aida, N. Barreau, B. Abdallah, N. Hadj Zoubir, Thin Solid Films 519, 5 (2010), doi: 10.1016/j.tsf.2010.06.063
  • [20] J.H. Lee, B.O. Park, Thin Solid Films 426, 94 (2003), doi: 10.1016/S0040-6090(03)00014-2
  • [21] V. Musat, B. Teixeira, E. Fortunato, R.C.C. Monteiro, P. Villarinho, Surf. Coat. Technol. 180-181, 659 (2004), doi: 10.1016/j.surfcoat.2003.10.112
  • [22] S. Al-Khawaja, B. Abdallah, S. Abou Shaker, M. Kakhia, Composite Interfaces 22, 221 (2014), doi: 10.1080/15685543.2015.1002259
  • [23] C. Jagadish, J. Peatron, Zinc Oxide Bulk, Thin Films and Nanostructures Processing: Properties and Applications, Elsevier, Amsterdam 2006
  • [24] S. Rahmane, B. Abdallah, A. Soussou, E. Gautron, P.-Y. Jouan, L. Le Brizoual, N. Barreau, A. Soltani, M.A. Djouadi, Phys. Status Solidi. A 1-5, 1604 (2010), doi: 10.1002/pssa.200983776
  • [25] X.Y. Peng, M. Sajjad, J. Chu, B.Q. Yang, P.X. Feng, Appl. Surf. Sci. 257, 4795 (2011), doi: 10.1016/j.apsusc.2010.12.041
  • [26] L.J. Mandalapu, F.X. Xiu, Z. Yang, J.L. Liu, J. Appl. Phys. 102, 023716 (2007), doi: 10.1063/1.2759874
  • [27] F. Chaabouni, M. Abaab, B. Rezig, Superlatt. Microstruct. 39, 171 (2006)., doi: 10.1016/j.spmi.2005.08.070
  • [28] C. Messaoudi, D. Sayah, M. Abd-Lefdil, Phys. Status Solidi A 151, 93 (1995), doi: 10.1002/pssa.2211510110
  • [29] P. Scherrer, Nachr. Ges. Wiss. Göttingen 26, 98 (1918)
  • [30] A.E. Rakhshani, Appl. Phys. A 92, 413 (2008), doi: 10.1007/s00339-008-4542-y
  • [31] M. Bouderbala, S. Hamzaoui, B. Amrani, A.H. Reshak, M. Adnane, T. Sahraoui, M. Zerdali, Physica B Condens. Matter 403, 3326 (2008), doi: 10.1016/j.physb.2008.04.045
  • [32] H.J. Chang, C.Z. Lu, Y. Wang, C.S. Son, S.I. Kim, Y.H. Kim, I.H. Choi, J. Korean Phys. Soc. 45, 959 (2004)
  • [33] Leanddas Nurdiwijayanto, Bambang Sunendar Purwasasmita, J. Mater. Sci. Eng. 11, 1 (2010)
  • [34] G.G. Valle, P. Hammer, S.H. Pulcinelli, C.V. Santilli, Europ. Ceram. Soc. 24, 1009 (2004), doi: 10.1016/S0955-2219(03)00597-1
  • [35] S.M. Sze, Semiconductor Devices, Physics and Technology, Wiley, USA 1985
  • [36] D.K. Schroder, Semiconductor Material and Device Characterization, Wiley, USA 1990
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv128n308kz
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