Simulation of Carbon Ions Interactions with Monocrystalline Silicon Targets

• Authors: A. Bouguerra , R. Labbani
• Languages of publication: EN

Abstracts

EN

In this work, several phenomena related to carbon ion implantation into Si(100) targets were simulated. The investigation was performed using Crystal-TRIM code (crystal-transport and range of ions in matter) under different conditions. In particular, we simulated the carbon profiles with respect to: (i) ions beam (energy, dose, orientation); (ii) substrate (temperature, crystallographic orientation). Two particular cases were taken into account: (i) implantation of 80 keV C⁺ to a fluence of 2.7× 10¹⁷ ion/cm² at room temperature; (ii) implantation of 40 keV C⁺ to a fluence of 6.5× 10¹⁷ ion/cm² at substrate temperature of 400°C. For both cases, we used a tilt angle of 7°. Several results were obtained and compared with the Rutherford backscattering spectroscopy and elastic recoil detection analysis results provided by literature.

Keywords

EN

78.20.Bh; 85.40.Ry

Discipline

• 85.40.Ry: Impurity doping, diffusion and ion implantation technology
• 78.20.Bh: Theory, models, and numerical simulation

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2015
• Volume: 128
• Issue: 2B
• Pages: B-67-B-70

Dates

published

2015-8

Contributors

author

A. Bouguerra

• Laboratoire de Physique Mathématique et Subatomique, Département de Physique, Faculté des Sciences Exactes, Université Constantine 1, Route de Ain El Bey, 25000 Constantine, Algeria

author

R. Labbani

• Laboratoire de Physique Mathématique et Subatomique, Département de Physique, Faculté des Sciences Exactes, Université Constantine 1, Route de Ain El Bey, 25000 Constantine, Algeria

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Identifiers

DOI

10.12693/APhysPolA.128.B-67