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2015 | 128 | 2B | B-67-B-70
Article title

Simulation of Carbon Ions Interactions with Monocrystalline Silicon Targets

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EN
Abstracts
EN
In this work, several phenomena related to carbon ion implantation into Si(100) targets were simulated. The investigation was performed using Crystal-TRIM code (crystal-transport and range of ions in matter) under different conditions. In particular, we simulated the carbon profiles with respect to: (i) ions beam (energy, dose, orientation); (ii) substrate (temperature, crystallographic orientation). Two particular cases were taken into account: (i) implantation of 80 keV C⁺ to a fluence of 2.7× 10¹⁷ ion/cm² at room temperature; (ii) implantation of 40 keV C⁺ to a fluence of 6.5× 10¹⁷ ion/cm² at substrate temperature of 400°C. For both cases, we used a tilt angle of 7°. Several results were obtained and compared with the Rutherford backscattering spectroscopy and elastic recoil detection analysis results provided by literature.
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EN
Contributors
author
  • Laboratoire de Physique Mathématique et Subatomique, Département de Physique, Faculté des Sciences Exactes, Université Constantine 1, Route de Ain El Bey, 25000 Constantine, Algeria
author
  • Laboratoire de Physique Mathématique et Subatomique, Département de Physique, Faculté des Sciences Exactes, Université Constantine 1, Route de Ain El Bey, 25000 Constantine, Algeria
References
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv128n2b017kz
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