Preferences help
enabled [disable] Abstract
Number of results
2015 | 128 | 2B | B-19-B-22
Article title

Development of Giant Magnetoresistance Material Based on Cobalt Ferrite

Title variants
Languages of publication
This paper describes an experimental study on development of giant magnetoresistance material based on cobalt ferrite (CoFe₂O₄). We have successfully developed a new giant magnetoresistance material based on CoFe₂O₄ i.e; sandwich (CoFe₂O₄/CuO/CoFe₂O₄), spin valve (FeMn/CoFe₂O₄/CuO/CoFe₂O₄), and organic giant magnetoresistance (CoFe₂O₄/Alq₃/CoFe₂O₄) using dc-opposed target magnetron sputtering method. Crystalline structure and morphology of thin films were characterized by X-ray diffraction and scanning electron microscope. The electrical properties were characterized using a four-point probe and magnetic properties were characterized using a vibrating sample magnetometer. In sandwich structure, the giant magnetoresistance ratio maximum are found at room temperature in CoFe₂O₄/CuO/CoFe₂O₄ thin film is 70% when CoFe₂O₄ and CuO layer thickness are 62.5 nm and 14.4 nm, respectively. The maximum of giant magnetoresistance ratio of the spin valve structure obtained is 32.5% at FeMn layer thickness of 45 nm. Meanwhile, in organic giant magnetoresistance the maximum value of the giant magnetoresistance ratio are approximately 35.5% at room temperature.

Physical description
  • Institut Teknologi Bandung, Department of Physics, Jl. Ganesa 10, Bandung, Indonesia
  • Institut Teknologi Sumatera, Department of Physics, Jl. Terusan Ryacudu, Lampung Selatan, Indonesia
  • Universitas Negeri Padang, Department of Physics, Jl. Prof. Hamka, Padang, Indonesia
  • Institut Teknologi Bandung, Department of Physics, Jl. Ganesa 10, Bandung, Indonesia
  • Institut Teknologi Bandung, Department of Physics, Jl. Ganesa 10, Bandung, Indonesia
  • [1] M. Djamal, Ramli, F. Haryanto, Khairurrijal, GMR Biosensors for Clinical Diagnostics, in: Biosensors for Health, Environment and Biosecurity, Ed. P.A. Serra, InTech, Rijeka 2011, p. 149, doi: 10.5772/16365
  • [2] B.G. Toth, L. Peter, L. Pogany, A. Revesz, I. Bakonyi, J. Electrochem. Soc. 161, D154 (2014), doi: 10.1149/2.053404jes
  • [3] Ramli, E. Sustini, N. Rauf, M. Djamal, Adv. Mater. Res. 979, 85 (2014), doi: 10.4028/
  • [4] Ramli, M. Djamal, F. Haryanto, S. Viridi, Khairurrijal, Adv. Mater. Res. 535, 1319 (2012), doi: 10.4028/
  • [4] R.G.Mani, A. Kriisa, W. Wegscheider, Sci Rep. 3, 2747 (2013), doi: 10.1038/srep02747
  • [5] J-W. Yoo, H.W. Jang, V.N. Prigodin, C. Kao, C.B. Eom, A.J. Eptein, Phys. Rev. B 80, 205207 (2009), doi: 10.1103/PhysRevB.80.205207
  • [6] J.H. Miao, S.L. Yuan, L. Yuan, G.M. Ren, X. Xiao, G.Q. Yu, Y.Q. Wang, S.Y. Yin, Mater. Res. Bull. 43, 631 (2008), doi: 10.1016/j.materresbull.2007.04.006
  • [7] H. Matsuda, H. Sakakima, J. Phys. D 44, 105001 (2011), doi: 10.1088/0022-3727/44/10/105001
  • [8] N. Tezuka, J. Mag. Magn. Matter. 324, 3588 (2012), doi: 10.1016/j.jmmm.2012.02.097
  • [9] J.P. Moussy, J. Phys. D 46 143001 (2013), doi: 10.1088/0022-3727/46/14/143001
  • [10] B.D. Culity, C.D. Graham, Introduction to Magnetic Materials, John Wiley & Sons, New Jersey 2009, doi: 10.1002/9780470386323
  • [11] J. Lee, J.Y. Park, Y. Oh, C.S. Kim, J. Appl. Phys. 84, 2801 (1998), doi: 10.1063/1.368393
  • [12] C. Suryanarayana, M.G. Norton, X-ray Diffraction, A Practical Approach, Plenum Press, New York 1998, doi: 10.1007/978-1-4899-0148-4
  • [13] S. Zhang, P.M. Levy, J. Appl. Phys. 73, 5315 (1993), doi: 10.1063/1.353766
  • [14] P. Bruno, C. Chappert, Phys. Rev. Lett. 67, 1602 (1991), doi: 10.1103/PhysRevLett.67.1602
  • [15] B. Dieny, P. Humbert, V.S. Speriosu, S. Metin, B.A. Gurney, P. Baumgart, H. Lefakis, Phys. Rev. B 45, 806 (1992), doi: 10.1103/PhysRevB.45.806
  • [16] U. Niedermeier, M. Vieth, R. Pätzold, W. Safert, H. von Seggern, Appl. Phys. Lett. 92, 193309 (2008), doi: 10.1063/1.2924765
Document Type
Publication order reference
YADDA identifier
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.