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2015 | 128 | 2 | 228-230
Article title

Undulator-Like Radiation and N² Effects in Semiconductor Microstructures with Grating

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EN
Abstracts
EN
In the article the cooperative N²-effects are considered, that is the radiation whose power is ım N², where N is the number of emitters which in this case is equal to the number of electrons in a bunch. The suggested effects are the result of combining two effects: the Gunn-effect in GaAs and undulator-like radiation, or "pumping wave" acting on the electrons and which is the result of undulator field, while the second is the backward effect of radiation which is produced by electrons moving within such microundulator. It is very probable that the effects can be used for the developing of a new semiconductor-based room temperature source of the THz-radiation.
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Contributors
author
  • Faculty of Mathematics and Natural Sciences, University of Rzeszów, S. Pigonia 1, 35-310 Rzeszów, Poland
author
  • Faculty of Mathematics and Natural Sciences, University of Rzeszów, S. Pigonia 1, 35-310 Rzeszów, Poland
References
  • [1] A.G. Davies, A.D. Burnett, E.H. Linfield, W. Fan, J.E. Cunningham, Mater. Today 11, 18 (2008), doi: 10.1016/S1369-7021(08)70016-6
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  • [3] Yun-Shik Lee, Principles of Terahertz Science and Technology, Springer Sci., New York 2009, doi: 10.1007/978-0-387-09540-0
  • [3a] B.S. Alexandrov, V. Gelev, A.R. Bishop, A. Usheva, K.O. Rasmussen, Phys. Lett. A 374, 1214 (2010), doi: 10.1016/j.physleta.2009.12.077
  • [4] I. Tralle, P. Zięba, Acta Phys. Pol. A 121, 522 (2012) http://przyrbwn.icm.edu.pl/APP/PDF/121/a121z2p77.pdf
  • [5] I. Tralle, P. Zięba, Phys. Lett. A 378, 1364 (2014), doi: 10.1016/j.physleta.2014.03.029
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv128n226kz
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