Electrons in a Semiconductor Quantum Well of the Magnetic Tunneling Structure

• Authors: T. Szczepański , V. Dugaev
• Languages of publication: EN

Abstracts

EN

We discuss the properties of resonant tunneling diode with resonant levels in the quantum well. The energy levels are formed inside the well as a consequence of quantization of the states between two potential barriers. We solved the Schrödinger equation for the multilayer structure and found the energy of resonant level as a function of the width of quantum well for different parameters of energy profile in the equilibrium. The results present the dependence of spin splitting in the quantum well of nonmagnetic semiconductor on the spin polarization of electrodes.

Keywords

EN

72.25.Dc; 73.21.Fg; 85.75.Mm

Discipline

• 72.25.Dc: Spin polarized transport in semiconductors
• 73.21.Fg: Quantum wells
• 85.75.Mm: Spin polarized resonant tunnel junctions

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2015
• Volume: 128
• Issue: 2
• Pages: 222-224

Dates

published

2015-08

Contributors

author

T. Szczepański

• Department of Physics, Rzeszów University of Technology, al. Powstańców Warszawy 6, 35-959 Rzeszów, Poland

author

V. Dugaev

• Department of Physics, Rzeszów University of Technology, al. Powstańców Warszawy 6, 35-959 Rzeszów, Poland
• Departamento de Física and CeFEMA, Instituto Superior Técnico, Universidade de Lisboa, av. Rovisco Pais, 1049-001 Lisbon, Portugal

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Identifiers

DOI

10.12693/APhysPolA.128.221