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2015 | 128 | 2 | 222-224
Article title

Electrons in a Semiconductor Quantum Well of the Magnetic Tunneling Structure

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EN
Abstracts
EN
We discuss the properties of resonant tunneling diode with resonant levels in the quantum well. The energy levels are formed inside the well as a consequence of quantization of the states between two potential barriers. We solved the Schrödinger equation for the multilayer structure and found the energy of resonant level as a function of the width of quantum well for different parameters of energy profile in the equilibrium. The results present the dependence of spin splitting in the quantum well of nonmagnetic semiconductor on the spin polarization of electrodes.
Keywords
EN
Publisher

Year
Volume
128
Issue
2
Pages
222-224
Physical description
Dates
published
2015-08
Contributors
  • Department of Physics, Rzeszów University of Technology, al. Powstańców Warszawy 6, 35-959 Rzeszów, Poland
author
  • Department of Physics, Rzeszów University of Technology, al. Powstańców Warszawy 6, 35-959 Rzeszów, Poland
  • Departamento de Física and CeFEMA, Instituto Superior Técnico, Universidade de Lisboa, av. Rovisco Pais, 1049-001 Lisbon, Portugal
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv128n224kz
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