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2015 | 128 | 2 | 219-221
Article title

Strain Designed Magnetic Properties of III-V Magnetic Semiconductors

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EN
Abstracts
EN
We present the theoretical analysis of a possibility of the magnetic anisotropy control using various components of the strain tensor in III-V magnetic semiconductor. We used the Kane model of the valence bands for the numerical simulations of the influence of strain on the Mn doped GaAs valence band structure. Calculating numerically the energy structure of deformed GaMnAs magnetic semiconductor, we also found the total energy of electron system as a function of orientation of the average magnetization vector. Our calculations show how the direction of the magnetization easy axis can be effectively rotated by using different types of deformation.
Keywords
EN
Year
Volume
128
Issue
2
Pages
219-221
Physical description
Dates
published
2015-08
References
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Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv128n223kz
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