Influence of Acoustic Phonons on the Magnetic Anisotropy in GaMnAs Magnetic Semiconductors

• Authors: C. Jasiukiewicz , S. Stagraczyński , D. Lehmann , V. Dugaev , J. Berakdar
• Languages of publication: EN

Abstracts

EN

We present a theoretical description of the influence of incoherent acoustic phonons on the magnetic anisotropy of magnetic semiconductors. Our theory is based on the six-band Kane model of the electron energy spectrum describing the valence band with k· p Hamiltonian including the hole-phonon interaction term. We include the effect of incoherent phonons through the hole self-energy in the six-band model, and assume a strong laser-pulse-induced flux of non-equilibrium acoustic phonons. The results of numerical calculations of magnetic anisotropy performed for (GaMn)(AsP) magnetic alloy semiconductors demonstrate the essential role of incoherent phonons.

Keywords

EN

75.50.Pp; 75.30.Gw; 77.80.Fm

Discipline

• 75.30.Gw: Magnetic anisotropy
• 77.80.Fm: Switching phenomena(for ultrafast magnetization dynamics and switching, see 75.78.Jp; for spintronics, see 85.75.-d)
• 75.50.Pp: Magnetic semiconductors

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2015
• Volume: 128
• Issue: 2
• Pages: 179-181

Dates

published

2015-08

Contributors

author

C. Jasiukiewicz

• Department of Physics, Rzeszów University of Technology, al. Powstańców Warszawy 6, 35-959 Rzeszów, Poland

author

S. Stagraczyński

• Institut für Physik, Martin-Luther-Universität Halle-Wittenberg, Karl-Freiherr-von-Fritsch Str. 3, 06120 Halle (Saale), Germany

author

D. Lehmann

• Institut für Theoretische Physik, Technische Universität Dresden, Zellescher Weg 17, 01062 Dresden, Germany

author

V. Dugaev

• Department of Physics, Rzeszów University of Technology, al. Powstańców Warszawy 6, 35-959 Rzeszów, Poland
• Departamento de Física and CeFEMA, Instituto Superior Técnico, Universidade de Lisboa, av. Rovisco Pais, 1049-001 Lisbon, Portugal

author

J. Berakdar

• Institut für Physik, Martin-Luther-Universität Halle-Wittenberg, Karl-Freiherr-von-Fritsch Str. 3, 06120 Halle (Saale), Germany

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Identifiers

DOI

10.12693/APhysPolA.128.179