Graphene Conductance in the Presence of Resonant Impurities

• Authors: M. Inglot , V. Dugaev
• Languages of publication: EN

Abstracts

EN

We discuss transport properties of graphene related to the resonant scattering from impurities and defects. Two different models describing defects in the bulk of graphene or at the graphene surface are used for the calculation of self energy of electrons scattered from short-range impurities or defects. The results of numerical calculations demonstrate a resonant character of resistance. In the case of neutral impurities or defects the scattering also leads to a resonant decrease of the spin relaxation time.

Keywords

EN

72.10.Fk; 72.80.Vp; 73.20.Hb

Discipline

• 73.20.Hb: Impurity and defect levels; energy states of adsorbed species
• 72.80.Vp: Electronic transport in graphene
• 72.10.Fk: Scattering by point defects, dislocations, surfaces, and other imperfections (including Kondo effect)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2015
• Volume: 128
• Issue: 2
• Pages: 163-165

Dates

published

2015-08

Contributors

author

M. Inglot

• Research and Development Centre for Photovoltaics, ML System Sp. z o.o., Warszawska 50D, 35-230 Rzeszów, Poland

author

V. Dugaev

• Department of Physics, Rzeszów University of Technology, al. Powstańców Warszawy 6, 35-959 Rzeszów, Poland
• Departamento de Física and CeFEMA, Instituto Superior Técnico, Universidade de Lisboa, av. Rovisco Pais, 1049-001 Lisbon, Portugal

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Identifiers

DOI

10.12693/APhysPolA.128.163