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2015 | 128 | 2 | 163-165
Article title

Graphene Conductance in the Presence of Resonant Impurities

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Abstracts
EN
We discuss transport properties of graphene related to the resonant scattering from impurities and defects. Two different models describing defects in the bulk of graphene or at the graphene surface are used for the calculation of self energy of electrons scattered from short-range impurities or defects. The results of numerical calculations demonstrate a resonant character of resistance. In the case of neutral impurities or defects the scattering also leads to a resonant decrease of the spin relaxation time.
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Contributors
author
  • Research and Development Centre for Photovoltaics, ML System Sp. z o.o., Warszawska 50D, 35-230 Rzeszów, Poland
author
  • Department of Physics, Rzeszów University of Technology, al. Powstańców Warszawy 6, 35-959 Rzeszów, Poland
  • Departamento de Física and CeFEMA, Instituto Superior Técnico, Universidade de Lisboa, av. Rovisco Pais, 1049-001 Lisbon, Portugal
References
  • [1] M.I. Katsnelson, Graphene: Carbon in Two Dimensions, Camridge University Press, Cambridge 2012, doi: 10.1017/CBO9781139031080
  • [2] A.H. Castro Neto, F. Guinea, N.M.R. Peres, K.S. Novoselov, A.K. Geim, Rev. Mod. Phys. 81, 109 (2009), doi: 10.1103/RevModPhys.81.109
  • [3] N.M.R. Peres, Rev. Mod. Phys. 82, 2673 (2010), doi: 10.1103/RevModPhys.82.2673
  • [4] A.K. Geim, K.S. Novoselov, Nature Mater. 6, 183 (2007), doi: 10.1038/nmat1849
  • [5] A.V. Shytov, M.I. Katsnelson, L.S. Levitov, Phys. Rev. Lett. 99, 236801 (2007), doi: 10.1103/PhysRevLett.99.236801
  • [5a] A.V. Shytov, M.I. Katsnelson, L.S. Levitov, Phys. Rev. Lett. 99 246802 (2007), doi: 10.1103/PhysRevLett.99.246802
  • [6] D.V. Fedorov, M. Gradhand, S. Ostanin, I.V. Maznichenko, A. Ernst, J. Fabian, I. Mertig, Phys. Rev. Lett. 110, 156602 (2013), doi: 10.1103/PhysRevLett.110.156602
  • [7] N.M.R. Peres, F. Guinea, A.H. Castro Neto, Phys. Rev. B 73, 125411 (2005), doi: 10.1103/PhysRevB.73.125411
  • [8] M. Inglot, V.K. Dugaev, J. Appl. Phys. 109, 123709 (2011), doi: 10.1063/1.3598130
  • [9] T. Löfwander, M. Fogelstrom, Phys. Rev. B 76, 193401 (2007), doi: 10.1103/PhysRevB.76.193401
  • [10] M. Inglot, A. Dyrdal, V.K. Dugaev, J. Barnaś, Phys. Rev. B 91, 115410 (2015), doi: 10.1103/PhysRevB.91.115410
  • [11] C.L. Kane, E.J. Mele, Phys. Rev. Lett. 95, 226801 (2005), doi: 10.1103/PhysRevLett.95.226801
  • [12] P.S. Kireev, Semiconductor Physics, Mir Publishers, Moscow 1978
Document Type
Publication order reference
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YADDA identifier
bwmeta1.element.bwnjournal-article-appv128n206kz
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