Optimization of Polycrystalline CVD Diamond Seeding with the Use of sp³/sp² Raman Band Ratio

• Authors: L. Golunski , M. Sobaszek , M. Gardas , M. Gnyba , R. Bogdanowicz , M. Ficek , P. Plotka
• Languages of publication: EN

Abstracts

EN

The influence of various nanodiamond colloids used for seeding nondiamond substrates in microwave plasma enhanced chemical vapour deposition diamond process was investigated. Colloids based on deionized water, isopropanol alcohol and dimethyl sulfoxide (DMSO) were used with different grain size dispersion: 150, 400 and 35 nm, respectively. The influence of growth time was also taken into consideration and bias enhanced nucleation. Microcrystalline diamond films were deposited on the seeded substrates in microwave plasma chemical vapour deposition using hydrogen-methane gas mixture. Seeding efficiency was investigated by means of scanning electron microscopy and Raman spectroscopy. Authors defined the new factor called as diamond ideality factor (di) which can give a quick estimation of quality of film and relative sp³ content. Few main peaks were identified at the following wave numbers: diamond sp³ peak 1332 cm^{-1}, D band peak 1355 cm^{-1}, C-H bending peak 1440-1480 cm^{-1} and G band peak 1560 cm^{-1}. The best di was achieved for DMSO based colloid in all cases. The application of bias enhanced nucleation increases the diamond crystals size and the sp³/sp² ratio.

Keywords

EN

81.15.Gh; 81.05.ug; 82.80.Gk; 68.55.A-

Discipline

• 68.55.A-: Nucleation and growth
• 82.80.Gk: Analytical methods involving vibrational spectroscopy
• 81.15.Gh: Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)(for chemistry of MOCVD, see 82.33.Ya in physical chemistry and chemical physics)
• 81.05.ug: Diamond

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2015
• Volume: 128
• Issue: 1
• Pages: 136-140

Dates

published

2015-7

received

2014-05-12

revised

2014-11-19

(unknown)

2014-12-21

Contributors

author

L. Golunski

• Department of Metrology and Optoelectronics, Faculty of Electronics, Telecommunications and Informatics, Gdańsk University of Technology, G. Narutowicza 11/12, 80-233 Gdańsk, Poland

author

M. Sobaszek

• Department of Metrology and Optoelectronics, Faculty of Electronics, Telecommunications and Informatics, Gdańsk University of Technology, G. Narutowicza 11/12, 80-233 Gdańsk, Poland

author

M. Gardas

• Department of Metrology and Optoelectronics, Faculty of Electronics, Telecommunications and Informatics, Gdańsk University of Technology, G. Narutowicza 11/12, 80-233 Gdańsk, Poland

author

M. Gnyba

• Department of Metrology and Optoelectronics, Faculty of Electronics, Telecommunications and Informatics, Gdańsk University of Technology, G. Narutowicza 11/12, 80-233 Gdańsk, Poland

author

R. Bogdanowicz

• Department of Metrology and Optoelectronics, Faculty of Electronics, Telecommunications and Informatics, Gdańsk University of Technology, G. Narutowicza 11/12, 80-233 Gdańsk, Poland

author

M. Ficek

• Department of Metrology and Optoelectronics, Faculty of Electronics, Telecommunications and Informatics, Gdańsk University of Technology, G. Narutowicza 11/12, 80-233 Gdańsk, Poland

author

P. Plotka

• Department of Microelectronic Systems, Faculty of Electronics, Telecommunications and Informatics, Gdańsk University of Technology, G. Narutowicza 11/12, 80-233 Gdańsk, Poland

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Identifiers

DOI

10.12693/APhysPolA.128.136