Variation of Electrical Resistivity with High Pressure in Ge-Te-Sn Glasses: A Composition Dependent Study

• Authors: K. Prasad , Chandasree Das , K. Rukmani , S. Asokan
• Languages of publication: EN

Abstracts

EN

The variation of normalized electrical resistivity in the system of glasses Ge_{15}Te_{85-x}Sn_{x} with (1 ≤ x ≤ 5) has been studied as a function of high pressure for pressures up to 9.5 GPa. It is found that with the increase in pressure, the resistivity decreases initially and shows an abrupt fall at a particular pressure, indicating the phase transition from semiconductor to near metallic at these pressures, which lie in the range 1.5-2.5 GPa, and then continues being metallic up to 9.5 GPa. This transition pressure is seen to decrease with the increase in the percentage content of tin due to increasing metallicity of tin. The semiconductor to near metallic transition is exactly reversible and may have its origin in a reduction of the band gap due to high pressure.

Keywords

EN

72.80.Ng

Discipline

• 72.80.Ng: Disordered solids

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2015
• Volume: 127
• Issue: 6
• Pages: 1666-1671

Dates

published

2015-06

received

2014-10-04

(unknown)

2015-02-11

Contributors

author

K. Prasad

• Department of Physics, Bangalore University, Bangalore 560056, India
• Department of Physics, BNM Institute of Technology, Bangalore 560070, India

author

Chandasree Das

• Department of Instrumentation and Applied Physics, Indian Institute of Science, Bangalore 560012, India
• Department of Electrical and Electronics Engineering, BMS College of Engineering, Bangalore 560018, India

author

K. Rukmani

• Department of Physics, Bangalore University, Bangalore 560056, India

author

S. Asokan

• Department of Instrumentation and Applied Physics, Indian Institute of Science, Bangalore 560012, India

References

• [1] A.V. Kolobov, J. Tominaga, J. Mater. Sci. Mater. Electron. 14, 677 (2003), doi: 10.1023/A:1026166701612
• [2] L. Greer, N. Mathur, Nature 437, 1246 (2005), doi: 10.1038/4371246a
• [3] H. Lee, Y.K. Kim, D. Kim, D.H. Kang, IEEE Trans. Magn. 41, 1034 (2005), doi: 10.1109/TMAG.2004.842032
• [4] J.Ch. Rhee, M. Okuda, T. Matsushita, Jpn. J. Appl. Phys. 26, 102 (1987), doi: 10.1143/JJAP.26.102
• [5] T. Nagano, E. Ueda, Sh. Onayama, R. Katayama, Hi. Hamada, Y. Ono, Jpn. J. Appl. Phys. 32, 5263 (1993), doi: 10.1143/JJAP.32.5263
• [6] K. Uchino, K. Takada, T. Ohno, H. Yoshida, Y. Kobayashi, Jpn. J. Appl. Phys. 32, 5354 (1993), doi: 10.1143/JJAP.32.535
• [7] J. Biceramo, S.R. Ovshinsky, J. Non-Cryst. Solids 74, 75 (1985), doi: 10.1016/0022-3093(85)90402-8
• [8] S. Murugavel, K.V. Acharya, S. Asokan, J. Non-cryst. Solids 191, 327 (1995), doi: 10.1016/0022-3093(95)00302-9
• [9] S. Asokan, G. Parthasarathy, E.S.R. Gopal, Philos. Mag. B 57, 49 (1988), doi: 10.1080/13642818808205722
• [10] G. Parthasarathy, E.S.R. Gopal, Bull. Mater. Sci. 7, 271 (1985), doi: 10.1007/BF02747579
• [11] G. Parthasarathy, S. Asokan, S.S.K. Titus, R.R. Krishna, Phys. Lett. A 131, 441 (1988), doi: 10.1016/0375-9601(88)90297-6
• [12] G. Parthasarathy, R. Ramakrishna, S. Asokan, E.S.R. Gopal, J. Mater. Sci. Lett. 58, 809 (1986), doi: 10.1007/BF01730099
• [13] S.S.K. Titus, S. Asokan, R. Ramakrishna, E.S.R. Gopal, Philos. Mag. B 62, 553 (1990), doi: 10.1080/13642819008215252
• [14] S. Asokan, E.S.R. Gopal, G. Parthasarathy, J. Mater. Sci. 21, 625 (1986), doi: 10.1007/BF01145533
• [15] G. Parthasarathy, A.K. Bandyopadhyay, S. Asokan, E.S.R. Gopal, Solid State Commun. 51, 195 (1984), doi: 10.1016/0038-1098(84)90994-3
• [16] S.S.K. Titus, S. Asokan, E.S.R. Gopal, High Press. Res. 10, 629 (1992), doi: 10.1080/08957959208202844
• [17] D. Verma, B.H. Sharmila, K. Rukmani, S. Asokan, High Press. Res. 28, 55 (2008), doi: 10.1080/08957950701782569
• [18] B.H. Sharmila, J.T. Devaraju, S. Asokan, J. Non-Cryst. Solids 303, 372 (2002), doi: 10.1016/S0022-3093(02)01048-7
• [19] D.P. Gosain, K.L. Bhatia, G. Parthasarathy, E.S.R. Gopal, Phys. Rev. B 32, 2727 (1985), doi: 10.1103/PhysRevB.32.2727
• [20] S.K. Minomura, K. Aoki, O. Shimomura, Electronic Phenomena in Non-Crystalline Solids, Nauka, Leningrad 1976
• [21] G.M. Naik, G. Parthasarathy, E.S.R. Gopal, P.S. Narayanan, J. Mater. Sci. Lett. 4, 1017 (1985), doi: 10.1007/BF00721108
• [22] K.N.N. Prasad, M.M. Rahman, K. Rukmani, S. Asokan, High Press. Res. Int. J. 34, 309 (2014), doi: 10.1080/08957959.2014.941361
• [23] C.C. Bradley, High Pressure Methods in Solid State Research, Butterworths, London 1969
• [24] A.K. Bandyopadhyay, A.V. Nalini, E.S.R. Gopal, S.V. Subramanyam, Rev. Sci. Instrum. 51, 136 (1980), doi: 10.1063/1.1136041
• [25] W. Jr. Klement, A. Jayaraman, G.C. Kennedy, Phys. Rev. 131, 632 (1963), doi: 10.1103/PhysRev.131.632
• [26] M. Xu, Y.Q. Cheng, L. Wang, H.W. Sheng, Y. Meng, W.G. Yang, X.D. Han, E. Ma, Proc. Natl. Acad. Sci. USA 109, E1055 (2012), doi: 10.1073/pnas.1119754109
• [27] C. Das, G. Mohan Rao, S. Asokan, J. Non-Cryst. Solids 358, 224 (2012), doi: 10.1016/j.jnoncrysol.2011.09.021
• [28] J.M. Marshall, A.E. Owen, Philos. Mag. 22, 903 (1971), doi: 10.1080/14786437108217413
• [29] J.C. Phillips, M.F. Thorpe, Solid State Commun. 53, 699 (1985), doi: 10.1016/0038-1098(85)90381-3
• [30] J.C. Phillips, Phys. Rev. B 31, 8157 (1985), doi: 10.1103/PhysRevB.31.8157
• [31] M.F. Thorpe, J. Non-Cryst. Solids 57, 355 (1983), doi: 10.1016/0022-3093(83)90424-6

Identifiers

DOI

10.12693/APhysPolA.127.1666