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2015 | 127 | 6 | 1666-1671
Article title

Variation of Electrical Resistivity with High Pressure in Ge-Te-Sn Glasses: A Composition Dependent Study

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EN
Abstracts
EN
The variation of normalized electrical resistivity in the system of glasses Ge_{15}Te_{85-x}Sn_{x} with (1 ≤ x ≤ 5) has been studied as a function of high pressure for pressures up to 9.5 GPa. It is found that with the increase in pressure, the resistivity decreases initially and shows an abrupt fall at a particular pressure, indicating the phase transition from semiconductor to near metallic at these pressures, which lie in the range 1.5-2.5 GPa, and then continues being metallic up to 9.5 GPa. This transition pressure is seen to decrease with the increase in the percentage content of tin due to increasing metallicity of tin. The semiconductor to near metallic transition is exactly reversible and may have its origin in a reduction of the band gap due to high pressure.
Keywords
EN
Publisher

Year
Volume
127
Issue
6
Pages
1666-1671
Physical description
Dates
published
2015-06
received
2014-10-04
(unknown)
2015-02-11
Contributors
author
  • Department of Physics, Bangalore University, Bangalore 560056, India
  • Department of Physics, BNM Institute of Technology, Bangalore 560070, India
  • Department of Instrumentation and Applied Physics, Indian Institute of Science, Bangalore 560012, India
  • Department of Electrical and Electronics Engineering, BMS College of Engineering, Bangalore 560018, India
author
  • Department of Physics, Bangalore University, Bangalore 560056, India
author
  • Department of Instrumentation and Applied Physics, Indian Institute of Science, Bangalore 560012, India
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv127n618kz
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