Study of the Electrical Behavior of Metal/α-SiC:H/poly-Si(N) Structure Using Simulation

• Authors: P. Papadopoulou , S. Stavrinides , M. Hanias , L. Magafas
• Languages of publication: EN

Abstracts

EN

In this report, a study of the electrical behavior for the Metal/a-SiC/poly-Si(n) structure, appears. Different thicknesses of a-SiC:H thin films are considered; in specific the a-SiC:H layer thickness is varied between 100 Å up to 800 Å. The 2-D ATLAS advanced numerical simulator has been utilized in order to simulate the material's electrical behavior and produce the reported hereby results. The study of the I-V (current-voltage) characteristics of these Metal/α-SiC:H/poly-Si(N) structures, reveals a very interesting hysteretic behavior that is a function of the a-SiC:H thin-film thickness. Such materials have lately raised the engineering community's interest because of their possible utilization as memristive elements.

Keywords

EN

85.30.De; 85.30.Mn; 85.30.Hi

Discipline

• 85.30.Mn: Junction breakdown and tunneling devices (including resonance tunneling devices)
• 85.30.De: Semiconductor-device characterization, design, and modeling
• 85.30.Hi: Surface barrier, boundary, and point contact devices

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2015
• Volume: 127
• Issue: 4
• Pages: 1349-1351

Dates

published

2015-04

Contributors

author

P. Papadopoulou

• Electrical Engineering Department, E.M.T. Institute of Technology, Kavala, Greece

author

S. Stavrinides

• Physics Department, Aristotle University of Thessaloniki, Thessaloniki, Greece

author

M. Hanias

• Physics Department, National Kapodestrian University of Athens, Athens, Greece

author

L. Magafas

• Electrical Engineering Department, E.M.T. Institute of Technology, Kavala, Greece

References

• [1] S.M. Allameh, W.O. Soboyejo, T.S. Srivatsan, Advanced Structural Materials: Properties Design Optimization and Applications, 63, 2006
• [2] L. Magafas, Active and Passive Electron Components 26, 63 (2003), doi: 10.1080/0882751021000010627
• [3] M.W.M. van Cleef et al., Journal of non-crystalline solids 227, 1291 (1998), doi: 10.1016/S0022-3093(98)00210-5
• [4] M.P. Hanias et al., in Chaos and Complex Systems Conference Proceedings, Eds S.G. Stavrinides et al., Springer-Verlag Berlin Heidelberg, 475, 2013, doi: 10.1007/978-3-642-33914-1_66
• [5] L. Magafas, J.Eng. Sci. and Tech. Review 1, 41 (2008)
• [4] A.G. Milnes, Heterojunction and Metal/Semiconductor Junctions, Academic Press, New York, 1972

Identifiers

DOI

10.12693/APhysPolA.127.1349