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2015 | 127 | 4 | 1349-1351
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Study of the Electrical Behavior of Metal/α-SiC:H/poly-Si(N) Structure Using Simulation

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In this report, a study of the electrical behavior for the Metal/a-SiC/poly-Si(n) structure, appears. Different thicknesses of a-SiC:H thin films are considered; in specific the a-SiC:H layer thickness is varied between 100 Å up to 800 Å. The 2-D ATLAS advanced numerical simulator has been utilized in order to simulate the material's electrical behavior and produce the reported hereby results. The study of the I-V (current-voltage) characteristics of these Metal/α-SiC:H/poly-Si(N) structures, reveals a very interesting hysteretic behavior that is a function of the a-SiC:H thin-film thickness. Such materials have lately raised the engineering community's interest because of their possible utilization as memristive elements.
  • Electrical Engineering Department, E.M.T. Institute of Technology, Kavala, Greece
  • Physics Department, Aristotle University of Thessaloniki, Thessaloniki, Greece
  • Physics Department, National Kapodestrian University of Athens, Athens, Greece
  • Electrical Engineering Department, E.M.T. Institute of Technology, Kavala, Greece
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