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Abstracts
In this report, a study of the electrical behavior for the Metal/a-SiC/poly-Si(n) structure, appears. Different thicknesses of a-SiC:H thin films are considered; in specific the a-SiC:H layer thickness is varied between 100 Å up to 800 Å. The 2-D ATLAS advanced numerical simulator has been utilized in order to simulate the material's electrical behavior and produce the reported hereby results. The study of the I-V (current-voltage) characteristics of these Metal/α-SiC:H/poly-Si(N) structures, reveals a very interesting hysteretic behavior that is a function of the a-SiC:H thin-film thickness. Such materials have lately raised the engineering community's interest because of their possible utilization as memristive elements.
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Volume
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Pages
1349-1351
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Dates
published
2015-04
Contributors
author
- Electrical Engineering Department, E.M.T. Institute of Technology, Kavala, Greece
author
- Physics Department, Aristotle University of Thessaloniki, Thessaloniki, Greece
author
- Physics Department, National Kapodestrian University of Athens, Athens, Greece
author
- Electrical Engineering Department, E.M.T. Institute of Technology, Kavala, Greece
References
- [1] S.M. Allameh, W.O. Soboyejo, T.S. Srivatsan, Advanced Structural Materials: Properties Design Optimization and Applications, 63, 2006
- [2] L. Magafas, Active and Passive Electron Components 26, 63 (2003), doi: 10.1080/0882751021000010627
- [3] M.W.M. van Cleef et al., Journal of non-crystalline solids 227, 1291 (1998), doi: 10.1016/S0022-3093(98)00210-5
- [4] M.P. Hanias et al., in Chaos and Complex Systems Conference Proceedings, Eds S.G. Stavrinides et al., Springer-Verlag Berlin Heidelberg, 475, 2013, doi: 10.1007/978-3-642-33914-1_66
- [5] L. Magafas, J.Eng. Sci. and Tech. Review 1, 41 (2008)
- [4] A.G. Milnes, Heterojunction and Metal/Semiconductor Junctions, Academic Press, New York, 1972
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv127n4134kz