Fabrication and Characterization of Vanadium/Vanadium Pentoxide/Vanadium (V/V₂O₅/V) Tunnel Junction Diodes

• Authors: M. Zia , M. Abdel-Rahman , N. Al-Khalli , N. Debbar
• Languages of publication: EN

Abstracts

EN

A metal/insulator/metal (MIM) diode is a structure in which a thin oxide layer is sandwiched between two metal layers. Metal/insulator/metal (MIM) diodes coupled to antennas have been widely investigated as detectors for millimeter wave and infrared radiation for imaging and spectroscopic applications. In this work, we report on the fabrication and characterization of MIM tunnel junction diodes by using a new material combination, vanadium-vanadium pentoxide-vanadium (V/V₂O₅/V), with contact areas of 2× 2 μm². The V/V₂O₅/V MIM was fabricated using electron-beam lithography, sputter deposition and conventional liftoff methods. The fabricated V/V₂O₅/V MIM diodes showed a maximum absolute sensitivity of 2.35 V^{-1}. In addition, noise spectra for the fabricated MIM diodes were measured and analyzed.

Keywords

EN

85.30.Kk

Discipline

• 85.30.Kk: Junction diodes

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2015
• Volume: 127
• Issue: 4
• Pages: 1289-1291

Dates

published

2015-04

Contributors

author

M. Zia

• Prince Sultan Advanced Technologies Research Institute (PSATRI), College of Engineering, King Saud University, Riyadh 11421, Saudi Arabia

author

M. Abdel-Rahman

• Prince Sultan Advanced Technologies Research Institute (PSATRI), College of Engineering, King Saud University, Riyadh 11421, Saudi Arabia

author

N. Al-Khalli

• Electrical Engineering Department, College of Engineering, King Saud University, Riyadh 11421, Saudi Arabia

author

N. Debbar

• Electrical Engineering Department, College of Engineering, King Saud University, Riyadh 11421, Saudi Arabia

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Identifiers

DOI

10.12693/APhysPolA.127.1289