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2015 | 127 | 4 | 1289-1291
Article title

Fabrication and Characterization of Vanadium/Vanadium Pentoxide/Vanadium (V/V₂O₅/V) Tunnel Junction Diodes

Content
Title variants
Languages of publication
EN
Abstracts
EN
A metal/insulator/metal (MIM) diode is a structure in which a thin oxide layer is sandwiched between two metal layers. Metal/insulator/metal (MIM) diodes coupled to antennas have been widely investigated as detectors for millimeter wave and infrared radiation for imaging and spectroscopic applications. In this work, we report on the fabrication and characterization of MIM tunnel junction diodes by using a new material combination, vanadium-vanadium pentoxide-vanadium (V/V₂O₅/V), with contact areas of 2× 2 μm². The V/V₂O₅/V MIM was fabricated using electron-beam lithography, sputter deposition and conventional liftoff methods. The fabricated V/V₂O₅/V MIM diodes showed a maximum absolute sensitivity of 2.35 V^{-1}. In addition, noise spectra for the fabricated MIM diodes were measured and analyzed.
Keywords
EN
Publisher

Year
Volume
127
Issue
4
Pages
1289-1291
Physical description
Dates
published
2015-04
Contributors
author
  • Prince Sultan Advanced Technologies Research Institute (PSATRI), College of Engineering, King Saud University, Riyadh 11421, Saudi Arabia
  • Prince Sultan Advanced Technologies Research Institute (PSATRI), College of Engineering, King Saud University, Riyadh 11421, Saudi Arabia
author
  • Electrical Engineering Department, College of Engineering, King Saud University, Riyadh 11421, Saudi Arabia
author
  • Electrical Engineering Department, College of Engineering, King Saud University, Riyadh 11421, Saudi Arabia
References
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv127n4119kz
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