Compact Modeling of the Performance of SB-CNTFET as a Function of Geometrical and Physical Parameters

• Authors: A. Diabi , A. Hocini
• Languages of publication: EN

Abstracts

EN

In this work, we study the effects of geometrical and physical parameters on the performances of SB-CNTFET using a compact model. The influences of the physical parameters (height of the Schottky barrier (Φ_{SB}) capacity of oxide layer (C_{INS}) and geometrical parameter (nanotube diameter (d_{CNT})) on the static performance (I_{ON}/I_{OFF}) of SB-CNTFET have been investigated. We present a detailed analysis of the electrical performance of the SB-CNTFET or current-voltage characteristics (I_{D}=f(V_{DS}) for different values of V_{GS}, and also the characteristics (I_{D}=f(V_{GS})) for different values of V_{DS}. All these circuits are studied for a fixed value of Φ_{SB}=0.275 eV.

Keywords

EN

85.35.Kt; 85.30.Tv

Discipline

• 85.35.Kt: Nanotube devices
• 85.30.Tv: Field effect devices

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2015
• Volume: 127
• Issue: 4
• Pages: 1124-1127

Dates

published

2015-04

Contributors

author

A. Diabi

• Department of Electronics, University Mohamed Boudiaf of M'sila BP.166, Route Ichebilia, M'sila 28000 Algeria

author

A. Hocini

• Department of Electronics, University Mohamed Boudiaf of M'sila BP.166, Route Ichebilia, M'sila 28000 Algeria

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Identifiers

DOI

10.12693/APhysPolA.127.1124