Electrical and Optical Characteristics of n-GaSb/n-GaIn_{0.24}AsSb/p-GaAl_{0.34}AsSb Heterostructure Photodiode

• Authors: M. Ahmetoglu , B. Kucur , I. Andreev , E. Kunitsyna , M. Mikhailova , Y. Yakovlev
• Languages of publication: EN

Abstracts

EN

In the present paper, electrical and optical properties of n-GaSb/n-GaIn_{0.24}AsSb/p-GaAl_{0.34}AsSb double heterostructure (DH) with a diameter of 0.3 mm are reported. The current-voltage (I-V) characteristics of the structure were investigated at several temperatures in both, dark and under the illumination conditions. The effect of illumination was studied at different intensity values. Short circuit current and open circuit voltage as a function of intensity of incident light in photovoltaic mode are investigated.

Keywords

EN

72.20.-i; 73.40.Kp; 72.40.+w

Discipline

• 72.20.-i: Conductivity phenomena in semiconductors and insulators(see also 66.70.-f Nonelectronic thermal conduction and heat-pulse propagation in solids; thermal waves)
• 73.40.Kp: III-V semiconductor-to-semiconductor contacts,p-njunctions, and heterojunctions
• 72.40.+w: Photoconduction and photovoltaic effects

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2015
• Volume: 127
• Issue: 4
• Pages: 1007-1009

Dates

published

2015-04

Contributors

author

M. Ahmetoglu

• Department of Physics, Faculty of Sciences and Arts, Uludag University, 16059 Gorukle, Bursa, Turkey

author

B. Kucur

• Department of Physics, Faculty of Sciences and Arts, Uludag University, 16059 Gorukle, Bursa, Turkey

author

I. Andreev

• Ioffe Physical-Technical Institute RAS, Politekhnicheskaya 26, St. Petersburg 194021, Russia

author

E. Kunitsyna

• Ioffe Physical-Technical Institute RAS, Politekhnicheskaya 26, St. Petersburg 194021, Russia

author

M. Mikhailova

• Ioffe Physical-Technical Institute RAS, Politekhnicheskaya 26, St. Petersburg 194021, Russia

author

Y. Yakovlev

• Ioffe Physical-Technical Institute RAS, Politekhnicheskaya 26, St. Petersburg 194021, Russia

References

• [1] M.H.M. Reddy, J.T. Olesberg, C. Cao, J.P. Prineas, Semicond. Sci. Technol. 21, 267 (2006), doi: 10.1088/0268-1242/21/3/009
• [2] A.M. Monakhov, V.V. Sherstnev, A.P. Astakhova, Yu.P. Yakovlev, G. Boissier, R. Teissier, A.N. Baranov, Appl. Phys. Lett. 94, 051102 (2009), doi: 10.1063/1.3075852
• [3] M. Ahmetoglu, B. Kucur, I.A. Andreev, E.V. Kunitsyna, M.P. Mikhailova, Yu.P. Yakovlev, Infrared Phys. Techn. 53, 399 (2010), doi: 10.1016/j.infrared.2010.07.007
• [4] M.P. Mikhailova, I.A. Andreev, E.V. Kunitsyna, Yu.P. Yakovlev, Proc. SPIE 7355, 735511 (2009), doi: 10.1117/12.821004
• [5] E.V. Kunitsyna, I.A. Andreev, V.V. Sherstnev, T.V. L'vova, M.P. Mikhailova, Yu.P. Yakovlev, M. Ahmetoglu, G. Kaynak, O. Gurler, Optical Materials. 32, 1573 (2010), doi: 10.1016/j.optmat.2010.06.010
• [6] M.G. Mauk, V.M. Andreev, Semicond. Sci. Technol. 18, S191 (2003), doi: 10.1088/0268-1242/18/5/308
• [7] K. Qiu, A.C.S. Hayden, Appl. Energy. 91, 304 (2012), doi: 10.1016/j.apenergy.2011.09.041
• [8] M.G. Mauk, Springer Series Opti. 118, 673 (2006), doi: 10.1007/1-84628-209-8_21
• [9] A. Amariei, E.K. Polychroniadis, F. Dimroth, A.W. Bett, J. Cryst. Growth. 275, 1229 (2005), doi: 10.1016/j.jcrysgro.2004.11.145
• [10] K.J. Cheetham, P.J. Carrington, N.B. Cook, A. Krier, Sol. Energ. Mat. Sol. C. 95, 534 (2011), doi: 10.1016/j.solmat.2010.08.036
• [11] X. Peng, X. Guo, B. Zhang, X. Li, X. Zhao, X. Dong, W. Zheng, G. Du, Infrared Phys. Techn. 52, 152 (2009), doi: 10.1016/j.infrared.2009.06.003
• [12] I.A. Andreev, E.V. Kunitsyna, M.P. Mikhailova, Yu.P. Yakovlev, Mat. Res. Soc. Symp. Proc. 744, 589 (2003)
• [13] S. Sze, Physics of Semiconductor Devices, Wiley, New York, 1981

Identifiers

DOI

10.12693/APhysPolA.127.1007