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2015 | 127 | 4 | 1007-1009
Article title

Electrical and Optical Characteristics of n-GaSb/n-GaIn_{0.24}AsSb/p-GaAl_{0.34}AsSb Heterostructure Photodiode

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Abstracts
EN
In the present paper, electrical and optical properties of n-GaSb/n-GaIn_{0.24}AsSb/p-GaAl_{0.34}AsSb double heterostructure (DH) with a diameter of 0.3 mm are reported. The current-voltage (I-V) characteristics of the structure were investigated at several temperatures in both, dark and under the illumination conditions. The effect of illumination was studied at different intensity values. Short circuit current and open circuit voltage as a function of intensity of incident light in photovoltaic mode are investigated.
Keywords
EN
Contributors
author
  • Department of Physics, Faculty of Sciences and Arts, Uludag University, 16059 Gorukle, Bursa, Turkey
author
  • Department of Physics, Faculty of Sciences and Arts, Uludag University, 16059 Gorukle, Bursa, Turkey
author
  • Ioffe Physical-Technical Institute RAS, Politekhnicheskaya 26, St. Petersburg 194021, Russia
author
  • Ioffe Physical-Technical Institute RAS, Politekhnicheskaya 26, St. Petersburg 194021, Russia
author
  • Ioffe Physical-Technical Institute RAS, Politekhnicheskaya 26, St. Petersburg 194021, Russia
author
  • Ioffe Physical-Technical Institute RAS, Politekhnicheskaya 26, St. Petersburg 194021, Russia
References
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv127n4038kz
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