Morphological Changes and Enhancement of Ultraviolet Emission by Subsequent Thermal Treatment of Ga-Doped ZnO Nanostructures

• Authors: U. Manzoor
• Languages of publication: EN

Abstracts

EN

ZnO nanostructures doped with a high concentration of Gallium (Ga) were synthesized on a Si substrate by thermal evaporation. Subsequent heat treatments of selected nanostructures was done at 600°C, 700°C, 800°C and 900°C. Scanning electron microscope (SEM), X-Ray diffraction (XRD) and photoluminance (PL) studies was performed after every heat treatment. Systematic scanning electron microscope (SEM) studies suggest significant sublimation at 800°C. XRD results show that crystal quality was improved by annealing and phase separation may occur after high temperatures annealing. Ultraviolet (UV) and visible emission depends strongly on the annealing temperatures and luminescent efficiency of UV emission is enhanced significantly with heat treatment.

Keywords

EN

81.05.Dz; 78.55.Et

Discipline

• 78.55.Et: II-VI semiconductors
• 81.05.Dz: II-VI semiconductors

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2015
• Volume: 127
• Issue: 4
• Pages: 910-913

Dates

published

2015-04

Contributors

author

U. Manzoor

• Alamoudi Water Chair, King Saud University, P.O. Box 2460, Riyadh, 11451, Saudi Arabia

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Identifiers

DOI

10.12693/APhysPolA.127.910