Journal
Article title
Authors
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Abstracts
Ni₂S_{2-x} thin films with x=0, 0.5, and 1 were prepared by chemical bath deposition technique. Amorphous structure was discovered by XRD for x=1, while α-Ni₇S₆ and NiS phases were discovered for x=0, and x=0.5 respectively. SEM graphs of the studied films have confirmed the XRD results. Optical band gap values increase from 0.845 to 0.912 eV, with increase of the composition x from 0 to 1. Activation energy values increase in the range from x=0 to x=0.5 and does not change for x=1.
Discipline
- 78.68.+m: Optical properties of surfaces
- 73.50.Lw: Thermoelectric effects
- 68.55.jd: Thickness
- 78.20.Ci: Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
- 61.05.cp: X-ray diffraction
- 68.37.Hk: Scanning electron microscopy (SEM) (including EBIC)
- 73.90.+f: Other topics in electronic structure and electrical properties of surfaces, interfaces, thin films, and low-dimensional structures (Restricted to new topics in section 73)
- 68.55.J-: Morphology of films
Journal
Year
Volume
Issue
Pages
901-903
Physical description
Dates
published
2015-04
Contributors
author
- Electron Microscope and Thin Films Department, Physics Division, National Research Centre,, Dokki, 12311, Cairo, Egypt
author
- Electron Microscope and Thin Films Department, Physics Division, National Research Centre,, Dokki, 12311, Cairo, Egypt
author
- Electron Microscope and Thin Films Department, Physics Division, National Research Centre,, Dokki, 12311, Cairo, Egypt
References
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv127n4007kz