Structure and Some Physical Properties of Chemically Deposited Nickel Sulfide Thin Films

• Authors: A. Hammad , Z. ElMandouh , H. Elmeleegi
• Languages of publication: EN

Abstracts

EN

Ni₂S_{2-x} thin films with x=0, 0.5, and 1 were prepared by chemical bath deposition technique. Amorphous structure was discovered by XRD for x=1, while α-Ni₇S₆ and NiS phases were discovered for x=0, and x=0.5 respectively. SEM graphs of the studied films have confirmed the XRD results. Optical band gap values increase from 0.845 to 0.912 eV, with increase of the composition x from 0 to 1. Activation energy values increase in the range from x=0 to x=0.5 and does not change for x=1.

Keywords

EN

61.05.cp; 68.37.Hk; 68.55.jd; 68.55.J-; 78.20.Ci; 78.68.+m; 73.50.Lw; 73.90.+f

Discipline

• 78.68.+m: Optical properties of surfaces
• 73.50.Lw: Thermoelectric effects
• 68.55.jd: Thickness
• 78.20.Ci: Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
• 61.05.cp: X-ray diffraction
• 68.37.Hk: Scanning electron microscopy (SEM) (including EBIC)
• 73.90.+f: Other topics in electronic structure and electrical properties of surfaces, interfaces, thin films, and low-dimensional structures (Restricted to new topics in section 73)
• 68.55.J-: Morphology of films

• Journal: Acta Physica Polonica A
• Year: 2015
• Volume: 127
• Issue: 4
• Pages: 901-903

Dates

published

2015-04

Contributors

author

A. Hammad

• Electron Microscope and Thin Films Department, Physics Division, National Research Centre,, Dokki, 12311, Cairo, Egypt

author

Z. ElMandouh

• Electron Microscope and Thin Films Department, Physics Division, National Research Centre,, Dokki, 12311, Cairo, Egypt

author

H. Elmeleegi

• Electron Microscope and Thin Films Department, Physics Division, National Research Centre,, Dokki, 12311, Cairo, Egypt

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Identifiers

DOI

10.12693/APhysPolA.127.901