Electron Microscopy of Cracks in In_{x}Ga_{1-x}As/GaAs(001) Multi-Quantum Wells

• Authors: Y. Atici , K. Yildiz , U. Akgul
• Languages of publication: EN

Abstracts

EN

We studied cracks in two different In_{x}Ga_{1-x}As/GaAs(001) multi-quantum-well structures by electron microscopy. Transmission and scanning electron microscopy analyses of the sample-1 revealed that the epilayers associated with cracks. Detailed experimental works on the cracks were carried out by conventional and high-resolution electron microscopy. It was found that the epilayers were very effective on stopping the cracks in sample-1. Many dislocations were observed around the cracks and cracks tips. SEM images showed that the cracks formed an orthogonal set array accompanying with slits and pits. However, there were not observed any cracks in the sample-2.

Keywords

EN

81.05.Ea; 81.07.St; 81.70.-q; 61.72.Ff

Discipline

• 61.72.Ff: Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
• 81.07.St: Quantum wells
• 81.70.-q: Methods of materials testing and analysis(see also 82.80.-d Chemical analysis and related physical methods of analysis)
• 81.05.Ea: III-V semiconductors

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2015
• Volume: 127
• Issue: 3
• Pages: 859-862

Dates

published

2015-03

received

2014-03-28

(unknown)

2015-01-28

Contributors

author

Y. Atici

• Firat University, Department of Physics, 23119 Elazig, Turkey

author

K. Yildiz

• Firat University, Department of Physics, 23119 Elazig, Turkey

author

U. Akgul

• Firat University, Department of Physics, 23119 Elazig, Turkey

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Identifiers

DOI

10.12693/APhysPolA.127.859