Optical and Scintillation Properties of Bi_{4}(Ge_{x}S_{1-x})_{3}O_{12} Single Crystal

• Authors: X. Xiao , J. Xu , B. Lu , W. Cai , Y. Zhang , H. Shen , B. Yang , W. Xiang
• Languages of publication: EN

Abstracts

EN

The solid solution crystals, Bi_{4}(Ge_{x}Si_{1-x})_{3}O_{12} (BGSO) with x=0, 0.05, and 0.15, have been grown by the modified vertical Bridgman method. The as-grown crystals show 80% of transmittance with an absorption edge of 285 nm. The relative light yields of BGSO crystals are found to be 7.2%, 6.3%, and 4.2% of CsI(Tl) crystal for x=0, 0.05, and 0.15, respectively. The energy resolutions of these crystals are 18.9%, 21.3%, and 24.7%, respectively, with PMT for 662 keV gamma rays at room temperature when exposed to ^{137}Cs γ -ray. The scintillation performance of BGSO crystals clearly deteriorates with the increase of Ge content. However, the appropriate number of germanium ions doped to BSO crystal can improve its crystallization behavior and effectively restrain component segregation. It is expected that large size crystals of BGSO will be grown and applied to the dual readout calorimeter in the nearest future.

Keywords

EN

81.10.Fq; 61.05.C-; 78.20.Ci; 78.70.Ps

Discipline

• 78.20.Ci: Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
• 81.10.Fq: Growth from melts; zone melting and refining
• 78.70.Ps: Scintillation(see also 29.40.Mc, Scintillation detectors)
• 61.05.C-: X-ray diffraction and scattering(for x-ray diffractometers, see 07.85.Jy; for x-ray studies of crystal defects, see 61.72.Dd, Ff)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2015
• Volume: 127
• Issue: 3
• Pages: 854-858

Dates

published

2015-03

received

2014-02-09

(unknown)

2014-12-01

Contributors

author

X. Xiao

• School of Materials Science and Engineering, Tongji University, Shanghai 201804, P.R. China
• School of Materials Science and Engineering, Shanghai Institute of Technology, Shanghai 201418, P.R. China
• Department of Fundamental Science, Beifang University of Nationalities, Yinchuan 750021, P.R. China

author

J. Xu

• School of Materials Science and Engineering, Shanghai Institute of Technology, Shanghai 201418, P.R. China

author

B. Lu

• School of Materials Science and Engineering, Shanghai Institute of Technology, Shanghai 201418, P.R. China

author

W. Cai

• School of Materials Science and Engineering, Tongji University, Shanghai 201804, P.R. China

author

Y. Zhang

• School of Materials Science and Engineering, Shanghai Institute of Technology, Shanghai 201418, P.R. China

author

H. Shen

• School of Materials Science and Engineering, Shanghai Institute of Technology, Shanghai 201418, P.R. China

author

B. Yang

• School of Materials Science and Engineering, Shanghai Institute of Technology, Shanghai 201418, P.R. China

author

W. Xiang

• School of Materials Science and Engineering, Tongji University, Shanghai 201804, P.R. China

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Identifiers

DOI

10.12693/APhysPolA.127.854