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2015 | 127 | 3 | 767-769
Article title

Study of p-Layer Doping Density and Surface Band Bending on the Indium Tin Oxide/Hydrogenated Amorphous Silicon Heterojunction Solar Cells

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A solar cell (indium tin oxide (ITO)/p-doped amorphous silicon (p-a-Si:H)/intrinsic polymorphous silicon (i-pm-Si:H)/n-doped crystalline silicon (n-c-Si)) simulation, focused on p-layer doping density NA and surface band bending E_{sbb} at the interface ITO/p-layer has been performed. Despite the deterioration of p-layer material quality with doping density, the reduced bulk recombination was found to compensate for the increased loss in the p-layer. An increase of p-layer doping density NA and contact barrier height φ_{b0} (variation of the surface band bending E_{sbb}) leads to an increase of the efficiency of heterojunction with intrinsic thin layer solar cells.
  • Laboratoire de Physique des Plasmas, Matériaux Conducteurs et leurs Applications, U.S.T.O.M.B. B.P.1505, El M'nouar, Oran, Algérie
  • Laboratoire LTE Département de Génie Mécanique, E.N.S.E.T B.P.1523, Route d'Es Senia, 31000 Oran, Algérie
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