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2015 | 127 | 2 | 496-498
Article title

Magnetic Field Sensor Based on Magnetic Tunnel Junction with Voltage-Tunable Magnetic Anisotropy

Content
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EN
Abstracts
EN
We present a submicron magnetic field sensor with voltage-tunable magnetic field sensitivity. The device, based on magnetic tunnel junction, exhibits high tunnelling magnetoresistance ratio of up to 90%. Perpendicular magnetic anisotropy of thin ferromagnetic sensing layer in combination with an in-plane magnetized reference layer is used to obtain linear change in the sensor resistance in response to the in-plane magnetic field. The perpendicular anisotropy is further controlled by the bias voltage and, thus, the sensitivity of the sensor is changed. In addition, we evaluate the sensor selectivity for the magnetic field direction and present an influence of the temperature on the anisotropy.
Keywords
EN
Year
Volume
127
Issue
2
Pages
496-498
Physical description
Dates
published
2015-02
References
  • [1] M. Burghoff, T.H. Sander, A. Schnabel, D. Drung, L. Trahms, G. Curio, B.-M. Mackert, Appl. Phys. Lett. 85, 6278 (2004), doi: 10.1063/1.1836869
  • [2] C. Albon, A. Weddemann, A. Auge, K. Rott, A. Hütten, Appl. Phys. Lett. 95, 023101 (2009), doi: 10.1063/1.3179241
  • [3] S. Chatraphorn, E.F. Fleet, L.A. Wellstood, F.C. Knauss, T.M. Eiles, Appl. Phys. Lett. 76, 2304 (2000), doi: 10.1063/1.126327
  • [4] J.M. Almeida, P. Wiśniowski, P.P. Freitas, J. Appl. Phys. 103, 07E922 (2009), doi: 10.1063/1.2836721
  • [5] P. Wiśniowski, J.M. Almeida, S. Cardoso, N.P. Barradas, P.P. Freitas, J. Appl. Phys. 103, 07A910 (2008), doi: 10.1063/1.2838626
  • [6] W. Skowroński, M. Frankowski, J. Wrona, T. Stobiecki, P. Ogrodnik, J. Barnaś, Appl. Phys. Lett. 105, 072409 (2014), doi: 10.1063/1.4893463
  • [7] W. Skowroński, P. Wiśniowski, T. Stobiecki, S. Cardoso, P.P. Freitas, S. van Dijken, Appl. Phys. Lett. 101, 192401 (2012), doi: 10.1063/1.4765350
  • [8] D. Djayaprawira, K. Tsunekawa, M. Nagai, H. Maehara, S. Yamagata, N. Watanabe, S. Yuasa, Y. Suzuki, K. Ando, Appl. Phys. Lett. 86, 092502 (2005), doi: 10.1063/1.1871344
  • [9] J. Nogues, I.K. Schuller, J. Magn. Magn. Mater. 192, 203 (1999), doi: 10.1016/S0304-8853(98)00266-2
  • [10] T. Maruyama, Y. Shiota, T. Nozaki, K. Ohta, N. Toda, M. Mizuguchi, A.A. Tulapurkar, T. Shinjo, M. Shiraishi, S. Mizukami, Y. Ando, Y. Suzuki, Nat. Nanotechnol. 4, 158 (2009), doi: 10.1038/nnano.2008.406
  • [11] Y. Shiota, F. Bonell, S. Miwa, N. Mizuochi, T. Shinjo, Y. Suzuki, Appl. Phys. Lett. 103, 082410 (2013), doi: 10.1063/1.4819199
  • [12] S.E. Barnes, J. Ieda, S. Maekawa, Sci. Rep. 4, 4105 (2014), doi: 10.1038/srep04105
  • [13] J.G. Alzate, P.K. Amiri, G. Yu, P. Upadhyaya, J.A. Katine, J. Ocker, B. Langer, I.N. Krivorotov, K.L. Wang, Appl. Phys. Lett. 104, 112410 (2014), doi: 10.1063/1.4869152
Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv127n2109kz
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