Transmission Through Graphene Junctions with Rashba Spin-Orbit Coupling

• Authors: M. Rataj , J. Barnaś
• Languages of publication: EN

Abstracts

EN

Electronic transport in a graphene junction is considered theoretically. Graphene is assumed to be deposited on a substrate which generates Rashba spin-orbit coupling. However, the Rashba parameters in the two parts of the junction are assumed to be generally different. Additionally, different gate voltages are applied to the two parts, which allow tuning the Fermi level and potential step. We analyze the probabilities of electron transmission through the junction and electrical conductance in the linear response regime.

Keywords

EN

72.20.Fr; 72.80.Vp; 73.23.Ad; 73.40.Lq; 75.70.Tj

Discipline

• 73.23.Ad: Ballistic transport
• 72.80.Vp: Electronic transport in graphene
• 72.20.Fr: Low-field transport and mobility; piezoresistance
• 73.40.Lq: Other semiconductor-to-semiconductor contacts,p-njunctions, and heterojunctions
• 75.70.Tj: Spin-orbit effects(see also 71.70.Ej Spin-orbit coupling, Zeeman and Stark splitting, Jahn-Teller effect)

• Journal: Acta Physica Polonica A
• Year: 2015
• Volume: 127
• Issue: 2
• Pages: 481-483

Dates

published

2015-02

Contributors

author

M. Rataj

• Faculty of Physics, Adam Mickiewicz University, Umultowska 85, 61-614 Poznań, Poland
• The Nano-Bio-Medical Centre, Umultowska 85, 61-614 Poznań, Poland

author

J. Barnaś

• Faculty of Physics, Adam Mickiewicz University, Umultowska 85, 61-614 Poznań, Poland

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Identifiers

DOI

10.12693/APhysPolA.127.481