Charge and Spin Transport in a Metal-Semiconductor Heterostructure with Double Schottky Barriers

• Authors: S. Wolski , C. Jasiukiewicz , V. Dugaev , J. Barnaś , T. Slobodskyy , W. Hansen
• Languages of publication: EN

Abstracts

EN

Taking into account the available experimental results, we model the electronic properties and current-voltage characteristics of a ferromagnet-semiconductor junction. The Fe/GaAs interface is considered as a Fe/(i-GaAs)/n⁺-GaAs/n-GaAs multilayer structure with the Schottky barrier. We also calculate numerically the current-voltage characteristics of a double-Schottky-barrier structure Fe/GaAs/Fe, which are in agreement with available experimental data. For this structure, we have estimated the spin current in the GaAs layer, which characterizes spin injection from the ferromagnet to the semiconductor.

Keywords

EN

73.30.+y; 73.40.-c; 75.76.+j

Discipline

• 73.40.-c: Electronic transport in interface structures
• 75.76.+j: Spin transport effects(for devices exploiting spin polarized transport, see 85.75.Hh, 85.75.Mm, and 85.75.Ss)
• 73.30.+y: Surface double layers, Schottky barriers, and work functions(see also 82.45.Mp Thin layers, films, monolayers, membranes in electrochemistry; see also 87.16.D- Membranes, bilayers, and vesicles in biological physics)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2015
• Volume: 127
• Issue: 2
• Pages: 472-474

Dates

published

2015-02

Contributors

author

S. Wolski

• Department of Physics, Rzeszów University of Technology, Al. Powstańców Warszawy 6, 35-959 Rzeszów, Poland

author

C. Jasiukiewicz

• Department of Physics, Rzeszów University of Technology, Al. Powstańców Warszawy 6, 35-959 Rzeszów, Poland

author

V. Dugaev

• Department of Physics, Rzeszów University of Technology, Al. Powstańców Warszawy 6, 35-959 Rzeszów, Poland
• Departamento de Física and CeFEMA, Instituto Superior Técnico, Universidade de Lisboa, Av. Rovisco Pais, 1049-001 Lisbon, Portugal

author

J. Barnaś

• Faculty of Physics, Adam Mickiewicz University, ul. Umultowska 85, 61-614 Poznań, Poland

author

T. Slobodskyy

• Jungiusstraße 11, 20355 Hamburg, Germany

author

W. Hansen

• Jungiusstraße 11, 20355 Hamburg, Germany

References

• [1] I. Žutic, J. Fabian, S. Das Sarma, Rev. Mod. Phys. 76, 323 (2004), doi: 10.1103/RevModPhys.76.323
• [2] W.Y. Lee, S. Garedelis, B.C. Choi, Y.B. Xu, C.G. Smith, C.H. Barnes, A.D. Ritchi, E.H. Linfield, J.A.C. Bland, J. Appl. Phys. 85, 6682 (1999), doi: 10.1063/1.370504
• [3] P.R. Hammar, B.R. Bennet, M.J. Yang, M. Johnson, Phys. Rev. Lett. 83, 203 (1999), doi: 10.1103/PhysRevLett.83.203
• [4] G. Schmidt, D. Ferrand, L.W. Molenkamp, A.T. Filip, B.J. van Wees, Phys. Rev. B. 62, R4790 (2000), doi: 10.1103/PhysRevB.62.R4790
• [5] A. Khaetskii, J.C. Egues, D. Loss, C. Gould, G. Schmidt, L.W. Molenkamp, Phys. Rev. B 71, 235327 (2005), doi: 10.1103/PhysRevB.71.235327
• [6] E.I. Rashba, Phys. Rev. B 62, R16267 (2000), doi: 10.1103/PhysRevB.62.R16267
• [7] D.L. Smith, R.N. Silver, Phys. Rev. B 64, 045323 (2001), doi: 10.1103/PhysRevB.64.045323
• [8] S.M. Sze, K.K. Ng, Physics of Semiconductor Devices, Wiley, Hoboken 2007
• [9] E.H. Rhoderick, Solid-State, Electron Devices, IEE Proceedings I 129, 1 (1982), doi: 10.1049/ip-i-1.1982.0001
• [10] R.T. Tung, Appl. Phys. Rev. 1, 011304 (2014), doi: 10.1063/1.4858400
• [11] Q. O. Hu, E.S. Garlid, P.A. Crowell, C.J. Palmstrøm, Phys. Rev. B 84, 085306 (2011), doi: 10.1103/PhysRevB.84.085306
• [12] S.A. Crooker, E.S. Garlid, A.N. Chantis, D.L. Smith, K.S.M. Reddy, Q.O. Hu, T. Kondo, C.J. Palmstrøm, P.A. Crowell, Phys. Rev. B 80, 041305(R) (2009), doi: 10.1103/PhysRevB.80.041305
• [13] T. Nickiel, Structural, electrical, magnetic properties of iron layers grown on (001)GaAs, Thesis, Universität Hamburg, 2012
• [14] D.T. McInturff, E.S. Harmon, J.P.C. Chang, T.M. Pekarek, J.M. Woodall, Appl. Phys. Lett. 69, 1885 (1996), doi: 10.1063/1.117466
• [15] P. Schieffer, A. Guivarc'h, C. Lallaizon, B. Lépine, D. Sébilleau, P. Turban, C. Jézéquel, Appl. Phys. Lett. 89, 161923 (2006), doi: 10.1063/1.2364063
• [16] M. Kleverman, P. Omling, L.A. Ledebo, H.G. Grimmeiss, J. Appl. Phys. 54, 814 (1983), doi: 10.1063/1.332040
• [17] P.C. van Son, H. van Kempen, P. Wyder, Phys. Rev. Lett. 58, 2271 (1987), doi: 10.1103/PhysRevLett.58.2271

Identifiers

DOI

10.12693/APhysPolA.127.472