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2015 | 127 | 2 | 472-474
Article title

Charge and Spin Transport in a Metal-Semiconductor Heterostructure with Double Schottky Barriers

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EN
Abstracts
EN
Taking into account the available experimental results, we model the electronic properties and current-voltage characteristics of a ferromagnet-semiconductor junction. The Fe/GaAs interface is considered as a Fe/(i-GaAs)/n⁺-GaAs/n-GaAs multilayer structure with the Schottky barrier. We also calculate numerically the current-voltage characteristics of a double-Schottky-barrier structure Fe/GaAs/Fe, which are in agreement with available experimental data. For this structure, we have estimated the spin current in the GaAs layer, which characterizes spin injection from the ferromagnet to the semiconductor.
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EN
Contributors
author
  • Department of Physics, Rzeszów University of Technology, Al. Powstańców Warszawy 6, 35-959 Rzeszów, Poland
  • Department of Physics, Rzeszów University of Technology, Al. Powstańców Warszawy 6, 35-959 Rzeszów, Poland
author
  • Department of Physics, Rzeszów University of Technology, Al. Powstańców Warszawy 6, 35-959 Rzeszów, Poland
  • Departamento de Física and CeFEMA, Instituto Superior Técnico, Universidade de Lisboa, Av. Rovisco Pais, 1049-001 Lisbon, Portugal
author
  • Faculty of Physics, Adam Mickiewicz University, ul. Umultowska 85, 61-614 Poznań, Poland
author
  • Jungiusstraße 11, 20355 Hamburg, Germany
author
  • Jungiusstraße 11, 20355 Hamburg, Germany
References
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv127n2101kz
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