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2015 | 127 | 2 | 472-474
Article title

Charge and Spin Transport in a Metal-Semiconductor Heterostructure with Double Schottky Barriers

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EN
Abstracts
EN
Taking into account the available experimental results, we model the electronic properties and current-voltage characteristics of a ferromagnet-semiconductor junction. The Fe/GaAs interface is considered as a Fe/(i-GaAs)/n⁺-GaAs/n-GaAs multilayer structure with the Schottky barrier. We also calculate numerically the current-voltage characteristics of a double-Schottky-barrier structure Fe/GaAs/Fe, which are in agreement with available experimental data. For this structure, we have estimated the spin current in the GaAs layer, which characterizes spin injection from the ferromagnet to the semiconductor.
Keywords
EN
Year
Volume
127
Issue
2
Pages
472-474
Physical description
Dates
published
2015-02
References
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Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv127n2101kz
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