Photoelastic Phenomena in Stressed Laser Heterostructures

• Authors: L. Kulakova , N. Averkiev , A. Lutetskiy
• Languages of publication: EN

Abstracts

EN

The theoretical analysis of optical properties change in cubic crystals caused by simultaneous action of longitudinal and shear strains due to the photo-elastic interaction has been performed. The polarization characteristics change of a primary linear polarized light wave during propagation in the crystal has been studied. Results of the calculations were used to analyze photo-elastic phenomena in stressed heterostructures at the introduction of an alternating shear strain. The comparison of photo-elastic and acousto-electron phenomena in the laser heterostructures has been fulfilled. The results have been confirmed by the experiments in the InGaAs/GaAs structures at the action of shear strains excited by the ultrasonic waves.

Keywords

EN

78.20.-e; 78.20.Bh; 78.20.hb

Discipline

• 78.20.hb: Piezo-optical, elasto-optical, acousto-optical, and photoelastic effects(see also 43.35.Sx Acousto-optical effects, optoacoustics, acoustical visualization, acoustical microscopy, and acoustical holography—in Acoustics Appendix; for acousto-optical devices, see 42.79.Jq, and 43.38.Zp—in Acoustics Appendix)
• 78.20.-e: Optical properties of bulk materials and thin films(for optical properties related to materials treatment, see 81.40.Tv; for optical materials, see 42.70-a; for optical properties of superconductors, see 74.25.Gz; for optical properties of rocks and minerals, see 91.60.Mk; for optical properties of specific thin films, see 78.66.-w)
• 78.20.Bh: Theory, models, and numerical simulation

• Journal: Acta Physica Polonica A
• Year: 2015
• Volume: 127
• Issue: 1
• Pages: 87-89

Dates

published

2015-01

Contributors

author

L. Kulakova

• Ioffe Physical Technical Institute, 26 Polytekhnicheskaya, St Petersburg 194021, Russian Federation

author

N. Averkiev

• Ioffe Physical Technical Institute, 26 Polytekhnicheskaya, St Petersburg 194021, Russian Federation

author

A. Lutetskiy

• Ioffe Physical Technical Institute, 26 Polytekhnicheskaya, St Petersburg 194021, Russian Federation

References

• [1] L.A. Kulakova, I.S. Tarasov, JETP Lett. 78, 67 (2003)
• [2] L.A. Kulakova, N.A. Pikhtin, S.I. Slipchenko, I.S. Tarasov, JETP 104, 689 (2007), doi: 10.1134/S1063776107050020
• [3] L.A. Kulakova, Appl. Opt. 48, 1128 (2009)
• [4] L.A. Kulakova, A.V. Lyutetskii, V.B. Voloshinov, Tech. Phys. Lett. 36, 563 (2010), doi: 10.1134/S1063785010060222
• [5] L.A. Kulakova, N.S. Averkiev, A.V. Lyutetskiy, V.A. Gorelov, Semiconductors 47, 135 (2013), doi: 10.1134/S1063782613010168
• [6] R.W.J. Dixon, J. Appl. Phys. 38, 5149 (1967), doi: 10.1063/1.1709293

Identifiers

DOI

10.12693/APhysPolA.127.87