The Effect of Hydrogenation on the Electrical Resistivity of Amorphous Alloys

• Authors: M. Ornat , A. Paja
• Languages of publication: EN

Abstracts

EN

Theoretical investigations of the influence of hydrogen contents on the electrical resistivity of amorphous metallic alloys have been carried out. We have made use of our method of calculations of the electrical resistivity of disordered systems based on the ground of Morgan-Howson-Saub and Evans models. Our method is fully quantum, includes multiple scattering effects and uses the scattering matrix operators for describing the electron-ion interactions. The model gives good agreement with experiment for many binary systems and should work for ternary systems as well, thus we performed calculations with hydrogen as one of the components of a ternary alloy. The results of our calculations show that the resistivity should increase with hydrogen concentration. Some experimental data confirm this predication.

Keywords

EN

72.15.Cz; 72.15.Qm; 72.15.Rn

Discipline

• 72.15.Qm: Scattering mechanisms and Kondo effect(see also 75.20.Hr Local moments in compounds and alloys; Kondo effect, valence fluctuations, heavy fermions in magnetic properties and materials)
• 72.15.Rn: Localization effects (Anderson or weak localization)
• 72.15.Cz: Electrical and thermal conduction in amorphous and liquid metals and alloys

• Journal: Acta Physica Polonica A
• Year: 2014
• Volume: 126
• Issue: 6
• Pages: 1296-1298

Dates

published

2014-12

received

2014-05-06

Contributors

author

M. Ornat

• AGH University of Science and Technology, Faculty of Physics and Applied Computer Science, Department of Solid State Physics, al. A. Mickiewicza 30, 30-059 Krakow, Poland

author

A. Paja

• AGH University of Science and Technology, Faculty of Physics and Applied Computer Science, Department of Solid State Physics, al. A. Mickiewicza 30, 30-059 Krakow, Poland

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Identifiers

DOI

10.12693/APhysPolA.126.1296