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2014 | 126 | 5 | 1199-1202
Article title

Swift Xe^{26+} Ion Irradiation Effect on Luminescent Properties of Undoped and Cd-Doped ZnO Films

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EN
Abstracts
EN
Here we report the effect of the irradiation by 167 MeV Xe^{26+} ions (in the fluence range up to 3× 10^{12} ions/cm^2) on the undoped and Cd-doped (0.4, 0.5 at.%) ZnO films deposited by radiofrequency magnetron sputtering. As-grown and irradiated samples were investigated by cathodoluminescence spectroscopy. It was found that the radiation causes a decrease in intensity of luminescent peaks and a redistribution of the radiative recombination channels. We revealed that the cadmium incorporation into ZnO lattice enhances the radiation resistance of ZnO film.
Keywords
EN
Year
Volume
126
Issue
5
Pages
1199-1202
Physical description
Dates
published
2014-11
References
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Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv126n542kz
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