DLTS Investigations of (Ga,In)(N,As)/GaAs Quantum Wells before and after Rapid Thermal Annealing

• Authors: Ł. Gelczuk , M. Dąbrowska-Szata , D. Pucicki
• Languages of publication: EN

Abstracts

EN

Deep level transient spectroscopy was used to investigate deep-level defects in (Ga,In)(N,As)/GaAs triple quantum well structures grown by atmospheric pressure metalorganic vapor phase epitaxy with different indium and nitrogen contents and annealed in rapid thermal annealing system. A combination of electron traps that disappear or remain on annealing and a new hole trap that appears on annealing were detected. The revealed electron traps were attributed to N-related complexes or GaAs host-related native point defects. Moreover, it was suggested that the new hole trap observed in the annealed GaAsN/GaAs triple quantum well structure together with the dominant electron trap can act as generation-recombination center responsible for the observed a very poor optical quality among all the investigated multi-quantum well structures.

Keywords

EN

71.55.Eq; 71.55.-i; 73.61.Ey

Discipline

• 71.55.Eq: III-V semiconductors
• 73.61.Ey: III-V semiconductors
• 71.55.-i: Impurity and defect levels

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2014
• Volume: 126
• Issue: 5
• Pages: 1195-1198

Dates

published

2014-11

Contributors

author

Ł. Gelczuk

• Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, Z. Janiszewskiego 11/17, 50-372 Wrocław, Poland

author

M. Dąbrowska-Szata

• Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, Z. Janiszewskiego 11/17, 50-372 Wrocław, Poland

author

D. Pucicki

• Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, Z. Janiszewskiego 11/17, 50-372 Wrocław, Poland

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Identifiers

DOI

10.12693/APhysPolA.126.1195