Optical and Structural Properties of GaAs/AlGaAs Quantum Wells Grown by MBE in the Vicinity of As-Rich-GaAs/ZnSe Heterovalent Interface

• Authors: G. Klimko , E. Evropeytsev , A. Sitnikova , S. Gronin , I. Sedova , S. Sorokin , S. Ivanov
• Languages of publication: EN

Abstracts

EN

The studies of structural and optical properties of molecular beam epitaxy grown pseudomorphic hybrid structures with AlGaAs/GaAs quantum well placed closely to the GaAs/ZnSe heterointerface are presented. The interfaces were formed in different ways (Zn or Se initial GaAs surface exposure, different growth temperature and ZnSe growth mode) on As-rich c(4×4) and (2×4) GaAs surfaces. It has been demonstrated that the photoluminescence intensity from the near-heterointerface GaAs QW is influenced most significantly by the procedure of ZnSe growth initiation. The bright photoluminescence (77 K) from the near-interface GaAs quantum well is observed if the Se-decoration procedure is used during the GaAs/ZnSe heterointerface formation on (2×4)As GaAs surface. It reduces noticeably if the GaAs reconstruction changes to c(4×4)As and disappears completely when Zn pre-exposure of GaAs surface is used. These effects are discussed in terms of different ratio of Ga-Se and As-Zn bonds at the GaAs/ZnSe heterointerface resulting in different band offsets and/or uncompensated built-in electric fields.

Keywords

EN

78.66.-w; 68.65.-k; 81.15.Hi

Discipline

• 78.66.-w: Optical properties of specific thin films(for optical properties of low-dimensional, mesoscopic, and nanoscale materials, see 78.67.-n; for optical properties of surfaces, see 78.68.+m)
• 81.15.Hi: Molecular, atomic, ion, and chemical beam epitaxy
• 68.65.-k: Low-dimensional, mesoscopic, nanoscale and other related systems: structure and nonelectronic properties(for structure of nanoscale materials, see 61.46.-w; for magnetic properties of interfaces, see 75.70.Cn; for superconducting properties, see 74.78.-w; for optical properties, see 78.67.-n; for transport properties, see 73.63.-b; for thermal properties of nanocrystals and nanotubes, see 65.80.-g; for mechanical properties of nanoscale systems, see 62.25.-g)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2014
• Volume: 126
• Issue: 5
• Pages: 1184-1186

Dates

published

2014-11

Contributors

author

G. Klimko

• Ioffe Physical-Technical Institute, Politekhnicheskaya 26, St. Petersburg 194021, Russia

author

E. Evropeytsev

• Ioffe Physical-Technical Institute, Politekhnicheskaya 26, St. Petersburg 194021, Russia

author

A. Sitnikova

• Ioffe Physical-Technical Institute, Politekhnicheskaya 26, St. Petersburg 194021, Russia

author

S. Gronin

• Ioffe Physical-Technical Institute, Politekhnicheskaya 26, St. Petersburg 194021, Russia

author

I. Sedova

• Ioffe Physical-Technical Institute, Politekhnicheskaya 26, St. Petersburg 194021, Russia

author

S. Sorokin

• Ioffe Physical-Technical Institute, Politekhnicheskaya 26, St. Petersburg 194021, Russia

author

S. Ivanov

• Ioffe Physical-Technical Institute, Politekhnicheskaya 26, St. Petersburg 194021, Russia

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Identifiers

DOI

10.12693/APhysPolA.126.1184