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2014 | 126 | 5 | 1184-1186
Article title

Optical and Structural Properties of GaAs/AlGaAs Quantum Wells Grown by MBE in the Vicinity of As-Rich-GaAs/ZnSe Heterovalent Interface

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Abstracts
EN
The studies of structural and optical properties of molecular beam epitaxy grown pseudomorphic hybrid structures with AlGaAs/GaAs quantum well placed closely to the GaAs/ZnSe heterointerface are presented. The interfaces were formed in different ways (Zn or Se initial GaAs surface exposure, different growth temperature and ZnSe growth mode) on As-rich c(4×4) and (2×4) GaAs surfaces. It has been demonstrated that the photoluminescence intensity from the near-heterointerface GaAs QW is influenced most significantly by the procedure of ZnSe growth initiation. The bright photoluminescence (77 K) from the near-interface GaAs quantum well is observed if the Se-decoration procedure is used during the GaAs/ZnSe heterointerface formation on (2×4)As GaAs surface. It reduces noticeably if the GaAs reconstruction changes to c(4×4)As and disappears completely when Zn pre-exposure of GaAs surface is used. These effects are discussed in terms of different ratio of Ga-Se and As-Zn bonds at the GaAs/ZnSe heterointerface resulting in different band offsets and/or uncompensated built-in electric fields.
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Contributors
author
  • Ioffe Physical-Technical Institute, Politekhnicheskaya 26, St. Petersburg 194021, Russia
  • Ioffe Physical-Technical Institute, Politekhnicheskaya 26, St. Petersburg 194021, Russia
author
  • Ioffe Physical-Technical Institute, Politekhnicheskaya 26, St. Petersburg 194021, Russia
author
  • Ioffe Physical-Technical Institute, Politekhnicheskaya 26, St. Petersburg 194021, Russia
author
  • Ioffe Physical-Technical Institute, Politekhnicheskaya 26, St. Petersburg 194021, Russia
author
  • Ioffe Physical-Technical Institute, Politekhnicheskaya 26, St. Petersburg 194021, Russia
author
  • Ioffe Physical-Technical Institute, Politekhnicheskaya 26, St. Petersburg 194021, Russia
References
  • [1] S.V. Ivanov, V.A. Kaygorodov, S.V. Sorokin, B.Ya. Meltser, V.A. Solov'ev, Ya.V. Terent'ev, O.G. Lyublinskaya, K.D. Moiseev, E.A. Grebenshchikova, M.P. Mikhailova, A.A. Toropov, Yu.P. Yakovlev, P.S. Kop'ev, Zh.I. Alferov, Appl. Phys. Lett. 82, 3782 (2003), doi: 10.1063/1.1577834
  • [2] S.V. Ivanov, O.G. Lyublinskaya, Yu.B. Vasilyev, V.A. Kaygorodov, S.V. Sorokin, I.V. Sedova, V.A. Solov'ev, B.Ya. Meltser, A.A. Sitnikova, T.V. L'vova, V.L. Berkovits, A.A. Toropov, P.S. Kop'ev, Appl. Phys. Lett. 84, 4777 (2004), doi: 10.1063/1.1759777
  • [3] A.A. Toropov, I.V. Sedova, S.V. Sorokin, Ya.V. Terent'ev, E.L. Ivchenko, S.V. Ivanov, Phys. Rev. B 71, 195312 (2005), doi: 10.1103/PhysRevB.71.195312
  • [4] F. Liaci, V.Kh. Kaibyshev, A.A. Toropov, Ya.V. Terent'ev, M.S. Mukhin, G.V. Klimko, S.V. Gronin, I.V. Sedova, S.V. Sorokin, S.V. Ivanov, Phys. Status Solidi C 9, 1790 (2012), doi: 10.1002/pssc.201100585
  • [5] R. Nicolini, L. Vanzetti, G. Mula, G. Bratina, L. Sorba, A. Franciosi, M. Peressi, S. Baroni, R. Resta, A. Baldereschi, J.E. Angelo, W.W. Gerberich, Phys. Rev. Lett. 72, 294 (1994), doi: 10.1103/PhysRevLett.72.294
  • [6] A. Kley, J. Neugebauer, Phys. Rev. B 50, 8616 (1994), doi: 10.1103/PhysRevB.50.8616
  • [7] A. Colli, E. Carlino, E. Pelucchi, V. Grillo, A. Franciosi, J. Appl. Phys. 96, 2592 (2004), doi: 10.1063/1.1769102
  • [8] A. Frey, U. Bass, S. Mahapatra, C. Schumacher, J. Geurts, K. Brunner, Phys. Rev. B 82, 195318 (2010), doi: 10.1103/PhysRevB.82.195318
  • [9] I.V. Sedova, G.V. Klimko, S.V. Sorokin, V.K. Kaibyshev, Ya.V. Terentyev, A.A. Toropov, S.V. Ivanov, in: Abstr. 17th Int. Conf. on Molecular Beam Epitaxy (MBE 2012), Nara (Japan), 2012, p. 251
  • [10] S.V. Ivanov, P.S. Kop'ev, N.N. Ledentsov, J. Cryst. Growth 108, 661 (1991), doi: 10.1016/0022-0248(91)90246-2
  • [11] E. Kato, H. Noguchi, M. Nagai, H. Okuyama, S. Kijima, A. Ishibashi, Electron. Lett. 34, 282 (1998), doi: 10.1049/el:19980229
  • [12] S. Miwa, L.H. Kuo, K. Kimura, T. Yasuda, A. Ohtake, C.G. Jin, T. Yao, Appl. Phys. Lett. 73, 939 (1998), doi: 10.1063/1.122045
  • [13] S.V. Gronin, I.V. Sedova, S.V. Sorokin, G.V. Klimko, K.G. Belyaev, A.V. Lebedev, A.A. Sitnikova, A.A. Toropov, S.V. Ivanov, Phys. Status Solidi C 9, 1833 (2012), doi: 10.1002/pssc.201100606
  • [14] L.H. Kuo, K. Kimura, T. Yasuda, S. Miwa, C.G. Jin, K. Tanaka, T. Yao, Appl. Phys. Lett. 68(17), 2413 (1996), doi: 10.1063/1.116151
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bwmeta1.element.bwnjournal-article-appv126n538kz
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