Anomalous Hall Effect in Ge_{1-x-y}Pb_{x}Mn_{y}Te Composite System

• Authors: A. Podgórni , L. Kilanski , W. Dobrowolski , M. Górska , V. Domukhovski , B. Brodowska , A. Reszka , B. Kowalski , V. Slynko , E. Slynko
• Languages of publication: EN

Abstracts

EN

The purpose of this study was to investigate the magnetotransport properties of the Ge_{0.743}Pb_{0.183}Mn_{0.074}Te mixed crystal. The results of magnetization measurements indicated that the compound is a spin-glass-like diluted magnetic semiconductor with critical temperature T_{SG}=97.5 K. Nanoclusters in the sample are observed. Both, matrix and clusters are magnetically active. Resistivity as a function of temperature has a minimum at 30 K. Below the minimum a variable-range hopping is observed, while above the minimum a metallic-like behavior occurs. The crystal has high hole concentration, p=6.6×10^{20} cm^{-3}, temperature-independent. Magnetoresistance amplitude changes from -0.78 to 1.18% with increase of temperature. In the magnetotransport measurements we observed the anomalous Hall effect with hysteresis loops. Calculated anomalous Hall effect coefficient, R_{S} = 2.0×10^{6} m^{3}/C, is temperature independent. The analysis indicates the extrinsic skew scattering mechanism to be the main physical mechanism responsible for anomalous Hall effect in Ge_{0.743}Pb_{0.183}Mn_{0.074}Te alloy.

Keywords

EN

61.72.J-; 72.80.Ga; 75.40.Mg; 75.50.Pp

Discipline

• 75.40.Mg: Numerical simulation studies
• 72.80.Ga: Transition-metal compounds
• 61.72.J-: Point defects and defect clusters
• 75.50.Pp: Magnetic semiconductors

• Journal: Acta Physica Polonica A
• Year: 2014
• Volume: 126
• Issue: 5
• Pages: 1180-1183

Dates

published

2014-11

Contributors

author

A. Podgórni

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warszawa, Poland

author

L. Kilanski

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warszawa, Poland

author

W. Dobrowolski

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warszawa, Poland

author

M. Górska

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warszawa, Poland

author

V. Domukhovski

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warszawa, Poland

author

B. Brodowska

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warszawa, Poland

author

A. Reszka

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warszawa, Poland

author

B. Kowalski

• Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warszawa, Poland

author

V. Slynko

• Institute of Materials Science Problems, Ukrainian Academy of Sciences, 5 Wilde Str., 274001 Chernovtsy, Ukraine

author

E. Slynko

• Institute of Materials Science Problems, Ukrainian Academy of Sciences, 5 Wilde Str., 274001 Chernovtsy, Ukraine

References

• [1] M.A. Ruderman, C. Kittel, Phys. Rev. 96, 99 (1954), doi: 10.1103/PhysRev.96.99
• [1a] T. Kasuya, Prog. Theor. Phys. 16, 45 (1956), doi: 10.1143/PTP.16.45
• [1b] K. Yosida, Phys. Rev. 106, 893 (1957), doi: 10.1103/PhysRev.106.893
• [2] Y. Fukuma, H. Asada, S. Miyawaki, T. Koyanagi, S. Senba, K. Goto, H. Sato, Appl. Phys. Lett. 93, 252502 (2008), doi: 10.1063/1.3166858
• [3] H. Asada Y. Fukuma, D. Kitabori, A. Ooji, Y. Kamimoto, T. Koyanagi, IEEE 44, 2696 (2008), doi: 10.1109/TMAG.2008.2003480
• [4] L. Kilanski, R. Szymczak, W. Dobrowolski, A. Podgórni, A. Avdonin, V.E. Slynko, E.I. Slynko, J. Appl. Phys. 113, 063702 (2013), doi: 10.1063/1.4790321
• [5] L. Kilanski, M. Górska, R. Szymczak, W. Dobrowolski, A. Podgórni, A. Avdonin, V. Domukhovski1, V.E. Slynko, E.I. Slynko, J. Appl. Phys. 116, 083904 (2014), doi: 10.1063/1.4893320
• [6] K.T. Aust, B. Chalmers, Can. J. Phys. 36, 977 (1958), doi: 10.1139/p58-103
• [7] R.R. Galazka J. Kossut, T. Story, in: Landolt-Börnstein, New Series, Group III/41B, Series Eds. O. Madelung, V. Rössler, M. Schulz, Vol. Ed. V. Rössler, Springer-Verlag, Berlin 1999, p. 647, doi: 10.1007/b71137
• [8] L. Kilanski, M. Arciszewska, V. Domukhovski, W. Dobrowolski, V.E. Slynko, I.E. Slynko, Acta. Phys. Pol. A 114, 1145 (2008) http://przyrbwn.icm.edu.pl/APP/PDF/114/a114z522.pdf
• [9] L. Kilanski, R. Szymczak, W. Dobrowolski, K. Szałowski, V.E. Slynko, E.I. Slynko, Phys. Rev. B 82, 094427 (2010), doi: 10.1103/PhysRevB.82.094427
• [10] L. Kilanski, M. Górska, W. Dobrowolski, M. Arciszewska, V. Domukhovski, J.R. Anderson, N.P. Butch, A. Podgórni, V.E. Slynko, E.I. Slynko, Acta. Phys. Pol. A 119, 654 (2011) http://przyrbwn.icm.edu.pl/APP/PDF/119/a119z5p24.pdf
• [11] A. Podgórni, L. Kilanski, W. Dobrowolski, M. Górska, A. Reszka, V. Domukhovski, B.J. Kowalski, B. Brodowska, J.R. Anderson, N.P. Butch, V.E. Slynko, E.I. Slynko, Acta. Phys. Pol. A 122, 1012 (2012) http://przyrbwn.icm.edu.pl/APP/PDF/122/a122z6p11.pdf
• [12] L. Kilanski, A. Podgórni, W. Dobrowolski, M. Górska, A. Reszka, B.J. Kowalski, V. Domukhovski, A. Szczerbakow, K. Szałowski, J.R. Anderson, N.P. Butch, V.E. Slynko, E.I. Slynko, J. Appl. Phys. 112, 123909 (2012), doi: 10.1063/1.4769795
• [13] B.I. Shklovskii, A.L. Efros, Electronic Properties of Doped Semiconductors, Springer, Berlin 1984
• [14] W.Q. Chen K.L. Teo, S.T. Lim, M.B.A. Jalil, T. Liew, T.C. Chong, Appl. Phys. Lett. 90, 142514 (2007), doi: 10.1063/1.2720353
• [15] L. Kilanski, M. Arciszewska, W. Dobrowolski, V. Domukhovski, V.E. Slynko, E.I. Slynko, J. Appl. Phys. 105, 103901 (2009), doi: 10.1063/1.3118528
• [16] J. Smit, Physica 12, 877 (1955), doi: 10.1016/S0031-8914(55)92596-9
• [17] L. Berger, Phys. Rev. B 2, 4559 (1970), doi: 10.1103/PhysRevB.2.4559

Identifiers

DOI

10.12693/APhysPolA.126.1180