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2014 | 126 | 5 | 1167-1170
Article title

Type I CdSe and CdMgSe Quantum Wells

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Abstracts
EN
In this work we present the band gap engineering, epitaxial growth and optical characterization of CdSe/Cd_{0.9}Mg_{0.1}Se and Cd_{0.9}Mg_{0.1}Se/Cd_{0.85}Mg_{0.15}Se quantum wells with a thickness ranging from 1 to 15 nm. These structures exhibit strong near-band-gap photoluminescence from helium up to room temperature. The emission energy is tuned in the range from 1.74 to 2.1 eV at 7 K, depending on the thickness and well composition. The most intense photoluminescence (both at 7 and 300 K) was observed for 10 nm thick CdSe/Cd_{0.9}Mg_{0.1}Se wells. Such a structure gives also a sharp emission line (FWHM = 20 meV) at low temperature. The presented quantum wells are well suited for being embedded in lattice matched ZnTe based microcavities.
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Contributors
author
  • Institute of Experimental Physics, Faculty of Physics, University of Warsaw, Hoża 69, 02-681 Warszawa, Poland
author
  • Institute of Experimental Physics, Faculty of Physics, University of Warsaw, Hoża 69, 02-681 Warszawa, Poland
author
  • Institute of Experimental Physics, Faculty of Physics, University of Warsaw, Hoża 69, 02-681 Warszawa, Poland
author
  • Institute of Experimental Physics, Faculty of Physics, University of Warsaw, Hoża 69, 02-681 Warszawa, Poland
author
  • Institute of Experimental Physics, Faculty of Physics, University of Warsaw, Hoża 69, 02-681 Warszawa, Poland
author
  • Institute of Experimental Physics, Faculty of Physics, University of Warsaw, Hoża 69, 02-681 Warszawa, Poland
author
  • Institute of Experimental Physics, Faculty of Physics, University of Warsaw, Hoża 69, 02-681 Warszawa, Poland
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv126n533kz
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