Type I CdSe and CdMgSe Quantum Wells

• Authors: R. Rudniewski , J. Rousset , E. Janik , P. Kossacki , A. Golnik , M. Nawrocki , W. Pacuski
• Languages of publication: EN

Abstracts

EN

In this work we present the band gap engineering, epitaxial growth and optical characterization of CdSe/Cd_{0.9}Mg_{0.1}Se and Cd_{0.9}Mg_{0.1}Se/Cd_{0.85}Mg_{0.15}Se quantum wells with a thickness ranging from 1 to 15 nm. These structures exhibit strong near-band-gap photoluminescence from helium up to room temperature. The emission energy is tuned in the range from 1.74 to 2.1 eV at 7 K, depending on the thickness and well composition. The most intense photoluminescence (both at 7 and 300 K) was observed for 10 nm thick CdSe/Cd_{0.9}Mg_{0.1}Se wells. Such a structure gives also a sharp emission line (FWHM = 20 meV) at low temperature. The presented quantum wells are well suited for being embedded in lattice matched ZnTe based microcavities.

Keywords

EN

78.20.-e   81.05.Dz   81.07.-b  

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2014
• Volume: 126
• Issue: 5
• Pages: 1167-1170

Dates

published

2014-11

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Identifiers

DOI

10.12693/APhysPolA.126.1167