Fabrication and Properties of the Photosensitive Anisotype n-Cd_{x}Zn_{1-x}O/p-CdTe Heterojunctions

• Authors: V. Khomyak , V. Brus , M. Ilashchuk , I. Orletsky , I. Shtepliuk , G. Lashkarev
• Languages of publication: EN

Abstracts

EN

We have fabricated photosensitive anisotype n-Cd_{x}Zn_{1-x}O/p-CdTe heterojunctions by a deposition of Cd_{0.5}Zn_{0.5}O film onto freshly-cleaved CdTe monocrystalline wafers using a radiofrequency magnetron reactive sputtering of a zinc-cadmium alloy target. Fundamental electrical properties of the heterojunctions were studied. Dominant mechanisms of a current transport were found. n-Cd_{x}Zn_{1-x}O/p-CdTe heterojunctions were photosensitive and were able to operate both in photovoltaic and photodiode modes.

Keywords

EN

72.40.+w; 73.40.Lq; 81.15.Lm

Discipline

• 73.40.Lq: Other semiconductor-to-semiconductor contacts,p-njunctions, and heterojunctions
• 81.15.Lm: Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)
• 72.40.+w: Photoconduction and photovoltaic effects

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2014
• Volume: 126
• Issue: 5
• Pages: 1163-1166

Dates

published

2014-11

Contributors

author

V. Khomyak

• Fedkovich Cherinvtsi National University, 2 Kotsubinsky str., 58012 Chernivtsi, Ukraine

author

V. Brus

• Fedkovich Cherinvtsi National University, 2 Kotsubinsky str., 58012 Chernivtsi, Ukraine

author

M. Ilashchuk

• Fedkovich Cherinvtsi National University, 2 Kotsubinsky str., 58012 Chernivtsi, Ukraine

author

I. Orletsky

• Fedkovich Cherinvtsi National University, 2 Kotsubinsky str., 58012 Chernivtsi, Ukraine

author

I. Shtepliuk

• Frantsevich Institute for Problems of Materials Science, NAS Ukraine, Krzhizhanivsky str., 03680 Kyiv, Ukraine

author

G. Lashkarev

• Frantsevich Institute for Problems of Materials Science, NAS Ukraine, Krzhizhanivsky str., 03680 Kyiv, Ukraine

References

• [1] A.L. Fahrenbruch, R.H. Bube, Fundamentals of Solar Cells. Photovoltaic Solar Energy Conversion, Academic Press, New York 1983
• [2] G.S. Khrypunov, V.R. Kopach, A.V. Meriuts, R.V. Zaitsev, M.V. Kirichenko, N.V. Deyneko, Semiconductors 45, 1505 (2011), doi: 10.1134/S1063782611110133
• [3] J.P. Enriquez, X. Mathew, G.P. Hernandez, U. Pal, C. Magana, D.R. Acosta, R. Guardian, J.A. Toledo, G.C. Puente, J.A. Chavez Carvayar, Sol. Energy Mater. Sol. Cells 82, 307 (2004) , doi: 10.1016/j.solmat.2004.02.017
• [4] A.M. Mancini, P. Pierine, A. Valentini, L. Vasamelli, Thin Solid Films 124, 85 (1985), doi: 10.1016/0040-6090(85)90032-X
• [5] V. Plotnikov, X. Liu, N. Paudel, D. Kwon, K.A. Wieland, A.D. Compaan, Thin Solid Films 519, 7134 (2011), doi: 10.1016/j.tsf.2010.12.179
• [6] V.V. Khomyak, M.M. Slyotov, I.I. Shtepliuk, G.V. Lashkarev, O.M. Slyotov, P.D. Marianchuk, V.V. Kosolovskiy, J. Phys. Chem. Solids 74, 291 (2013), doi: 10.1016/j.jpcs.2012.10.001
• [7] V. Khomyak, M. Slyotov, I. Shtepliuk, O. Slyotov, V. Kosolovskiy, Acta Phys. Pol. A 122, 1039 (2012) http://przyrbwn.icm.edu.pl/APP/PDF/122/a122z6p19.pdf
• [8] C. Jagadish, S.J. Pearton, Zinc Oxide Bulk, Thin Films and Nanostructures: Processing, Properties and Applications, Elsevier, Amsterdam 2006, p. 600
• [9] V. Consonni, G. Rey, J. Bonaime, N. Karst, B. Doisneau, H. Roussel, S. Renet, D. Bellet, Appl. Phys. Lett. 98, 111906 (2011), doi: 10.1063/1.3567764
• [10] T. Liu, X. He, J. Zhang, L. Feng, L. Wu, W. Li, G. Zeng, B.`Li, J. Semicond. 33, 093003 (2012), doi: 10.1088/1674-4926/33/9/093003
• [11] V.V. Khomyak, M.I. Ilashchuk, O.A. Parfenyuk, I.I. Shtepliuk, J. Appl. Phys. 114, 223715 (2013), doi: 10.1063/1.4839915
• [12] R. Ferro, J.A. Rodriguez, Solar En. Mater. Solar Cells 64, 363 (2000), doi: 10.1023/A:1021660730842
• [13] V.V. Khomyak, M.M. Slyotov, O.M. Slyotov, Sensor Electron. Microsyst. Technol. 2, 65 (2011)
• [14] D.W. Ma, Z.Z. Ye, J.Y. Huang, L.P. Zhu, B.H. Zhao, J.H. He, Mater. Sci. Eng. B 111, 9 (2004), doi: 10.1016/j.mseb.2003.12.007
• [15] Z. Ye, D. Ma, J. He, J. Huang, B. Zhao, X. Luo, Z. Xu, J. Cryst. Growth 256, 78 (2003), doi: 10.1016/S0022-0248(03)01314-9
• [16] I. Shtepliuk, G. Lashkarev, V. Khomyak, P. Marianchuk, P. Koreniuk, D. Myroniuk, V. Lazorenko, I. Timofeeva, Acta Phys. Pol. A 120, A-61 (2011) http://przyrbwn.icm.edu.pl/APP/PDF/120/a120z6ap18.pdf
• [17] I. Shtepliuk, G. Lashkarev, V. Khomyak, O. Lytvyn, P. Marianchuk, I. Timofeeva, A. Ievtushenko, V. Lazorenko, Thin Solid Films 520, 4772 (2012), doi: 10.1016/j.tsf.2011.10.181
• [18] V.V. Brus, M.I. Ilashchuk, V.V. Khomyak, Z.D. Kovalyuk, P.D. Maryanchuk, K.S. Ulyanytsky, Semiconductors 46, 1152 (2012), doi: 10.1134/S1063782612090059
• [19] I. Shtepliuk, V. Khranovskyy, G. Lashkarev, V. Khomyak, V. Lazorenko, A. Ievtushenko, M. Syväjärvi, V. Jokubavicius, R. Yakimova, Solid-State Electron. 81, 72 (2013), doi: 10.1016/j.sse.2013.01.015
• [20] S.M. Sze, Physics of Semiconductor Devices, Brisbar, Toronto 1981
• [21] L.S. Berman, Capacitance Methods for the Investigation of Semiconductors, Nauka, Leningrad 1972 (in Russian)
• [22] A.G. Milnes, D.L. Feucht, Heterojunctions and Metal-Semiconductor Junctions, Academic Press, New York 1972, p. 408

Identifiers

DOI

10.12693/APhysPolA.126.1163